Allicdata Part #: | NTJD2152PT2-ND |
Manufacturer Part#: |
NTJD2152PT2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 8V 0.775A SOT-363 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 8V 775mA 270mW Sur... |
DataSheet: | NTJD2152PT2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 775mA |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 570mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 8V |
Power - Max: | 270mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD2152P |
Series: | -- |
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.The NTJD2152PT2 is a two-channel enhancement mode N-channel MOSFET array designed for use in automotive, industrial and consumer applications such as high-speed switching applications, power control, and signal buffering. This device comprises two low-voltage MOSFETs with integrated Schottky diodes, sharing a common gate terminal. The integrated Schottky diodes are designed to protect against phase-shift problems that can be caused by reflected transients from an inductive load. The n-channel MOSFETs within the device have higher current capacity, lower RDS(on) and a higher switching performance, making them suitable for harsh operating conditions.
The NTJD2152PT2 operates within a wide voltage range of 8 to 25 volts, and is able to accept logic signals from 1.2 to 10 volts. The device is also highly efficient, consuming less current while maintaining a high switching performance. As a result, it offers an efficient solution for applications that require a low power consumption.
In terms of its working principle, the NTJD2152PT2 operates by channeling electrical current between source and drain terminals. The source and drain electrodes are connected to the source and drain electrodes of the MOSFET, while the gate electrode is connected to the gate terminal. Current is channeled through the MOSFET when the gate voltage is higher than the source voltage. In this “on-state”, current flows between the source and drain electrodes through the MOSFET, and the device’s RDS(on) is determined by the gate voltage. When the gate voltage is lower than the source voltage, current does not flow between the source and drain electrodes, and the device is in its “off-state”.
In terms of its application field, the NTJD2152PT2 is typically used in automotive, industrial and consumer applications where reliable high-speed switching and power control is needed. It can be used in motor controllers, LED drivers, motor starters, inverter and converter applications, and automotive powertrain modules. In addition, the device’s small size and low power consumption make it well suited for disposable and low-power applications such as sensors and switches.
In conclusion, the NTJD2152PT2 is a two-channel enhancement mode N-channel MOSFET array designed to provide reliable and efficient power control and signal buffering. Its high switching performance and wide voltage range make it suitable for a variety of automotive, industrial and consumer applications. It is also highly efficient, consuming less current and improving overall system performance.
The specific data is subject to PDF, and the above content is for reference
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