NTJD4001NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTJD4001NT1GOSTR-ND |
Manufacturer Part#: |
NTJD4001NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 0.25A SOT-363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Su... |
DataSheet: | NTJD4001NT1G Datasheet/PDF |
Quantity: | 27000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 250mA |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 33pF @ 5V |
Power - Max: | 272mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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NTJD4001NT1G application field and working principle
Transistors - FETs, MOSFETs - Arrays
The NTJD4001NT1G is a series of FET array devices containing four independent N-Channel MOSFETs in a single package. The devices are ideal for low current switching and amplifier applications, providing superior performance in terms of high breakdown voltage, input capacitance, and power dissipation. The device is rated for a maximum DC current of 5A, and is capable of providing up to a 70V breakdown voltage.
The array is designed to provide superior electrical performance in applications such as power switching, current sensing and overvoltage protection. The device contains two separate power ports, allowing for both voltage and current control. In addition, the array also includes integrated thermal shutdown circuitry and ESD protection, making it highly reliable even in harsh environments. The array can be used in a wide range of applications, such as audio amplifiers, power supplies, motor drive systems, lighting controls, solenoid and relay control, and more.
The NTJD4001NT1G FET array is composed of four separate N-channel MOSFETs, each containing a separate gate terminal, drain terminal and source terminal. The device also includes an internal zener diode and a linear current regulator (LCR). The zener diode provides overvoltage protection and the LCR serves to reduce the chances of parasitic oscillations or ringing. The device can be operated in either enhancement mode or depletion mode, depending on the polarity of the control voltage applied to the gates of the individual transistors.
When the gates of the four transistors are all connected to the same positive voltage source, the device is operating in enhancement mode. This allows current to flow from the sources through the transistors to the drains with the gate voltage controlling the amount of current. When the gates are connected to the same negative voltage source, the device is operating in depletion mode. This allows for current flow from the drains through the transistors to the sources, with the amount of current controlled by the gate voltage.
In addition, the NTJD4001NT1G FET array provides robust protection against electrostatic discharge (ESD). ESD protection is particularly important in environments where surges of high voltage can be expected, such as with lightning strikes, power grid reconfiguration, and other potentially damaging electrical events. The ESD protection helps to ensure that the device will continue to operate reliably even in hazardous conditions.
The NTJD4001NT1G FET array is ideal for a variety of low power switching and amplifier applications. Its wide range of features make it one of the most versatile FET arrays available. The device is rated for operating temperatures between -55°C and 150°C, making it suitable for use in both industrial and consumer applications. Furthermore, the device is available in both standard and short-lead packages, making it well-suited for use in compact designs.
In conclusion, the NTJD4001NT1G FET array is an ideal device for a variety of low power switching and amplifier applications. Its robust construction, wide operating range, and integrated thermal shutdown and ESD protection make it one of the most reliable FET arrays available. Further, its flexibility makes it an excellent choice for a broad range of applications across many industries.
The specific data is subject to PDF, and the above content is for reference
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