NTMFD4902NFT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFD4902NFT1GOSTR-ND |
Manufacturer Part#: |
NTMFD4902NFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3... |
DataSheet: | NTMFD4902NFT1G Datasheet/PDF |
Quantity: | 1500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual), Schottky |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A, 13.3A |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 15V |
Power - Max: | 1.1W, 1.16W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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The NTMFD4902NFT1G is one of the most popular models in the family of modern power transistor arrays. It belongs to the type of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). Originally developed to be used for digital and analog signals, it has numerous applications in the field of power delivery and switching solutions.
This power transistor array of NTMFD4902NFT1G has two terminals, source and drain. Technical specifications of the device state that the source-drain breakdown voltage is up to 12V and the maximum current handling is up to 100mA. Additionally, the threshold voltage is specified to be between 0.3V to 5V. Its dynamic characteriscty is also noted to be nonlinear with a ratio of 4:1.
In terms of application field, the NTMFD4902NFT1G can be applied to a broad range of electronic systems. Due to its wide range of application, this model is highly used in motor control systems, where it can be used as a power switch. The construction of this device makes it ideal and highly reliable for motor control as well as for inverter drives, which can be used for AC motors, DC motors, or automotive engine control systems. The NTMFD4902NFT1G is also a great choice for driving various types of power transformers and power switches, such as LED or LED array, or for power overload solutions.
The device is also widely known for its working principle, which is based on the phenomenon of capacitance. When two electrodes are placed in parallel, a capacitance arises between them. This causes a change in electrical energy, and creates a transmission of charge from one point to the other, thus affecting the flow of electricity, and allowing the power switch to work. In the NTMFD4902NFT1G, this phenomenon is regulated by the voltage between the source and the drain terminals.
Adding to the great efficiency of the NTMFD4902NFT1G, it also offers a great flexibility of design. Thanks to its dual load pin configuration, the device is able to transfer both high and low current without any increase in noise. Additionally, the user can also control the power transistors using the integrated gate voltage monitor, in order to configure the device to the best possible performance point.
If we look at all its features, the NTMFD4902NFT1G proves its worth for many power circuit applications. With its high system performance and its ability to cover a wide range of operation temperatures, it fits a lot of requirements for a wide range of devices. Furthermore, its high temperature stability and its excellent thermal conductivity make it a great candidate for long-term reliability.
To summarize, the modern power transistor array of NTMFD4902NFT1G is one of the best solutions for power delivery and switching solutions. Thanks to the combination of its wide application field, working principle and design flexibility, it presents an ideal choice for many electronic projects and systems.
The specific data is subject to PDF, and the above content is for reference
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