NTMFS6H801NT1G Allicdata Electronics

NTMFS6H801NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS6H801NT1GOSTR-ND

Manufacturer Part#:

NTMFS6H801NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRENCH 8 80V NFET
More Detail: N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W ...
DataSheet: NTMFS6H801NT1G datasheetNTMFS6H801NT1G Datasheet/PDF
Quantity: 1500
Stock 1500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS6H801NT1G is a single, NFET transistor commonly used in a variety of applications. It is part of the FET family, which is an acronym for Field Effect Transistor. This type of transistor is a semiconductor device that is used to regulate current flow. In the NTMFS6H801NT1G, this function is enabled by a voltage-dependent gate-source capacitance. The NTMFS6H801NT1G is most commonly used in digital logic and power amplifier circuits. It is also used for RF switching and high-speed logic level control.

To understand the operation of the NTMFS6H801NT1G, it is important to understand the basic principles of field effect transistors. FETs use an electric field to regulate the current flow between a gate and a source. The electric field is generated by applying a voltage to the gate. When the gate is given a positive voltage, it attracts electrons, and when a negative voltage is applied, it repels them. This creates an equilibrium in the electric field and prevents current flow. The electric field can also be altered manually using a field gate, which can be used to control the amount of current flowing through a semiconductor device.

The NTMFS6H801NT1G utilizes a P-channel depletion mode FET. This type of FET is characterized by its high input impedance and low current drain. It also has a low gate-source capacitance, which allows it to switch quickly. With a drain-source voltage of -30V, the NTMFS6H801NT1G can handle a maximum drain current of 6A. Its power dissipation is rated at 2.2W, and it has an operating junction temperature of 150°C.

The NTMFS6H801NT1G is commonly used in applications such as switching power supplies, DC/DC converters, motor control, and class D audio amplifiers. It can also be used in automotive applications such as engine control, ABS systems, and climate control. When used in switching applications, the NTMFS6H801NT1G can provide high performance and reliability. Its low input capacitance makes it ideal for use in high-speed logic circuits, and its low thermal resistance ensures efficient heat dissipation.

The NTMFS6H801NT1G is a versatile transistor suitable for a variety of applications. Its low input capacitance makes it ideal for high-speed logic level control, while its low current drain and power dissipation allow it to be used in power amplifier circuits. Additionally, its high input impedance and low voltage drop enable it to provide reliable performance in switching applications. Overall, the NTMFS6H801NT1G is a reliable and efficient transistor that is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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