NTMFS4C59NT3G

Vgs(th) (Max) @ Id:	2.1V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1252pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22.2nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5.8 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The NTMFS4C59NT3G is a Silicon N‐Channel Enhancement Mode MOS (Metal Oxide Silicon) Field‐Effect Transistor (FET) that combines a high level of performance and ease of use. This FET is a single, packaged device with four pins: gate, drain, source, and body. As a power FET, its basic purpose is to assist in switching and controlling the flow of electricity. In short, it facilitates and manages the flow of electrical current in a wide range of applications.Regarding its application field, the NTMFS4C59NT3G is designed for advanced high‐voltage power management applications. This FET is capable of supporting higher voltage levels measured in the kilovolt range and can handle voltages up to 30V. As a result, this FET is often used in power management circuits, power amplifiers, power inverters, and other high‐ voltage applications.The working principle of the NTMFS4C59NT3G is based on field-effect transistors (FETs). This type of transistor is made up of an insulated gate exhibiting current‐controlled voltage regulation. The basic idea behind the FET is that the current supplied to the gate (source action) will cause a depletion (or enrichment) of the channel between the source and the drain, thereby affecting the conduction of the drain current.In the NTMFS4C59NT3G, this depletion mode is applied to increase the resistance at the drain, thus limiting the flow of current. This is done by applying a negative voltage to the gate (source) and a positive voltage to the drain. When a small voltage is applied to the gate, the MOSFET operates in the linear region, and the drain current depends on the gate‐source voltage. As the gate‐source voltage increases further, the drain current exceeds the threshold voltage, and the MOSFET operates in the saturation region.When the NTMFS4C59NT3G is used in an appropriate application circuit, it can offer a number of benefits. For instance, it can provide low on-resistance and low gate-charge, which can help to reduce circuit power losses. Additionally, this FET uses innovative design technologies to deliver a high-frequency response and improved switching speeds. Furthermore, the on-state drain current of this FET can reach 5.0 A and it can support up to 400V in blocking voltage. Finally, the NTMFS4C59NT3G boasts high-pulse current reliability thanks to its fast-switching capabilities and low input-capacitance drain-source diode.All in all, the NTMFS4C59NT3G is an excellent N-Channel MOSFET device specifically designed for advanced high-voltage power management applications. It offers excellent switching performance, low on-resistance, and high-pulse current reliability. Additionally, this FET has the ability to manage higher voltage levels up to 30V, enabling it to be used in applications such as power management circuits, power amplifiers, power inverters, and other high-voltage applications. Its fast switching and low input-capacitance drain-source diode provide reliable pulsing. By understanding the features and benefits of this device and the working principle behind it, users can easily integrate it into their designs to maximize their performance.

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