NTMFS5C468NLT3G

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NTMFS5C468NLT3G is a static, insulated gate, p-channel power MOSFET that offers both switching and linear performance. The NTMFS5C468NLT3G is designed for protection of high voltage and low power circuits, particularly in automotive applications. It is available in a standard TO-263 package with an integrated Drain-Gate capacitor for EMI suppression.

The NTMFS5C468NLT3G MOSFET has a voltage rating of 20V and a drain current of 4.68A. It also has a RDS on of 0.052Ω which makes it suitable for high current applications. The device has an operating temperature range of -45 to 85℃. The device has an integrated drain-gate capacitor to enable EMI suppression, making it suitable for automotive applications. The device also has a high gate capacitance which makes it suitable for high speed switching.

Application Field

The NTMFS5C468NLT3G MOSFET is suitable for many applications including automotive, consumer electronics, industrial, power management, and lighting control applications. The device is used in automobile systems such as ABS and infotainment systems. It is also used in switch mode power supplies, motor control, power conversion, LED lighting, and DC-DC converters. It is also suitable for protection and control in switch gear and voltage regulator circuits.

Operating Principle

A MOSFET is an insulated gate field-effect transistor, which is used as a switch to control and regulate the flow of current in a circuit. The structure of the transistor comprises a source, a drain, and a gate, where the gate is insulated from the source and drain by an insulating gate oxide layer (usually silicon dioxide). A voltage applied to the gate controls the channel of the MOSFET which in turn controls the current flow between the source and the drain. The characteristics of the device can be selected by adjusting the gate voltage.

The NTMFS5C468NLT3G MOSFET is operated using two basic modes: switching and linear. In switching mode, the device is fully on and off, which is suitable for many applications. In linear mode, the device is used to regulate and control the power flow between the source and the drain. The device has an integrated drain-gate capacitor which enables EMI suppression and improves switching performance.

The device is highly reliable with low on-state resistance and drain-source leakage characteristics. The device has an integrated drain-gate capacitor which assists in reducing EMI noise while enabling high-speed switching applications. The NTMFS5C468NLT3G MOSFET is suitable for many high-current applications where low on-state resistance and good EMI suppression are important.

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