NTMFS4826NET1G Allicdata Electronics

NTMFS4826NET1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4826NET1GOSTR-ND

Manufacturer Part#:

NTMFS4826NET1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 66A SO-8FL
More Detail: N-Channel 30V 9.5A (Ta), 66A (Tc) 870mW (Ta), 41.7...
DataSheet: NTMFS4826NET1G datasheetNTMFS4826NET1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4826NET1G is a high current, low-voltage, single N-Channel MOSFET. It is one of the most popular MOSFETs for circuit design applications. Its unique structure and low RDS(on) make it a very effective and efficient choice for applications such as power switching, regulation, and low-loss conversion. It has a maximum current rating of 8.5A, a voltage rating of up to 45V, and a stable RDS(on)of only 8.3 mΩ@Vgs=10V.

The NTMFS4826NET1G is an ideal choice for applications that require low-loss power conversion, such as motor and transistor-based power converters. For example, it can be used in AC-to-DC converters, DC-to-DC converters, and DC-to-AC inverters. It can also be used in class D amplifiers for audio applications. In addition, its low on resistance makes it an ideal choice for lighting control systems, as it is able to provide high speed switching with low power dissipation.

The working principles of the NTMFS4826NET1G are fairly straightforward. Like all MOSFETs, it is a voltage-controlled device. When a voltage is applied to the gate, an electric field is created. This electric field attracts electrons, which move from the source to the drain through the channel. This channel creates resistance in the path, allowing the current to flow and the MOSFET to be used as a switch. The wide range of RDS(on) levels available in the NTMFS4826NET1G make it an ideal choice for applications requiring precise current control. In addition, the device can also be used in voltage regulation applications due to its low on resistance.

The NTMFS4826NET1G is very versatile and can be used in a wide range of applications. Its low RDS(on) means it is perfect for applications requiring low power dissipation and high speed switching. Its relatively low price, long shelf life, and wide range of performance characteristics makes it a great choice for small- to medium-scale applications. It is widely used in power electronics devices such as motor controllers, power converters, and voltage regulation circuits.

In conclusion, the NTMFS4826NET1G is one of the best choices for applications that require high current, low voltage MOSFET devices. Its low RDS(on) and wide range of performance characteristics make it an ideal choice for applications such as power conversion, motor control, and voltage regulation. It is widely used across various industries and those that require small to medium-scale solutions. In addition, its relatively low price and long shelf life make it a great choice for those on a tight budget.

The specific data is subject to PDF, and the above content is for reference

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