NTMFS4C029NT3G Allicdata Electronics
Allicdata Part #:

NTMFS4C029NT3G-ND

Manufacturer Part#:

NTMFS4C029NT3G

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 15A 46A 5DFN
More Detail: N-Channel 30V 15A (Ta), 46A (Tc) 2.49W (Ta), 23.6W...
DataSheet: NTMFS4C029NT3G datasheetNTMFS4C029NT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.10631
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5.88 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4C029NT3G is a high-performance, low-on-resistance, trench-mode, silicon-controlled rectifier (SCR) MOSFET produced by Fairchild Semiconductor. It is designed to meet the needs of a wide variety of applications, including multiplexers, relay drivers, analog switching, and pulse generation and power switching. With its high input impedance and fast switching speed, this device is a great choice for use in a variety of electronic products where maximum efficiency is desired.

The NTMFS4C029NT3G is a single N-channel trench-gate field effect transistor (FET). It is built from 3 terminals, the source (S), the drain (D), and the gate (G). It operates on the principle that current can flow through the source-drain channel when the gate terminals are activated, causing a voltage difference between the source and drain. It is designed to work over a wide range of voltages and frequencies. It is capable of carrying a current of up to 4 amps with a breakdown voltage of 30 volts.

The NTMFS4C029NT3G has a wide range of application fields, such as high frequency switching, power supplies, high power amplifiers, switching regulators and motors. It is suitable for digital and analog switching applications, providing fast switching with low on-resistance, over a wide range of voltages. It is also great for use in Pulse-Width Modulation (PWM) and pulse-average modulation (PAM) circuits for high frequency power switching and motor control. Furthermore, its low on-resistance and high quality MOSFET construction provide excellent performance in low voltage, high current applications.

In terms of its operational principles, the NTMFS4C029NT3G behaves much like any other MOSFET. When the gate is activated, the transistor conducts between its source and drain terminals. This is known as the \'turned on\' or \'saturation\' state. When the gate voltage is decreased, the transistor is turned off and current does not flow through the device. This is known as the \'turn off\' or \'cut off\' state. It is important to note that the gate voltage must be sufficiently strong for the device to switch from its \'on\' state to its \'off\' state, and vice versa.

The NTMFS4C029NT3G is a highly efficient and reliable MOSFET, making it a great choice for a variety of electronic applications. Its wide range of application fields and working principles make it a great device for many different applications. Whether it is being used for high frequency switching, power supplies, pulse-width modulation, or motor control, the device\'s great performance and low on-resistance ensure that it will provide maximum efficiency.

The specific data is subject to PDF, and the above content is for reference

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