Allicdata Part #: | NTMFS4H013NFT3G-ND |
Manufacturer Part#: |
NTMFS4H013NFT3G |
Price: | $ 2.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 35A SO8FL |
More Detail: | N-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W ... |
DataSheet: | NTMFS4H013NFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.80835 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Ta), 269A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3923pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 2.7W (Ta), 104W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NTMFS4H013NFT3G is a from from the family of bipolar transistors. It was originally designed for use in high current applications, but can also be used in lower current applications such as amplifiers or actuating solenoids. A good example of its use would be a high power amplifier driver or as a general purpose NPN transistor in an electronic circuit.
The NTMFS4H013NFT3G is an insulated gate bipolar transistor (IGBT). IGBTs are ideal for use in high power applications due to their low on resistance. This allows a low voltage drop across the device and gives it very low power dissipation.
The NTMFS4H013NFT3G is a half-bridge IGBT. It is made up of two parts, the upper part is an N-channel MOSFET (ON-state FET) and the lower part is a P-Channel MOSFET (OFF-state FET). The ON-state FET is the one that is active when the device is switching and it is responsible for conducting current. The OFF-state FET is idle when the device is not switching.
The NTMFS4H013NFT3G has an integrated gate drive circuit, which simplifies its circuit design. The gate drive circuit provides a low-power means of turning the device on and off. It also reduces the size and complexity of the circuit, as well as offering improved reliability.
The NTMFS4H013NFT3G has a wide range of applications. It can be used in power inverters, AC/DC converters, DC/DC converters, motor control systems, power switches, welding machines, UPS systems and any other application requiring high current and high speed switching.
The working principle of the NTMFS4H013NFT3G is simple and straightforward. In the ON-state, the gate drive circuit will pull the gate of the OFF-state FET to ground, turning it *OFF*. This allows current to flow through the ON-state FET, turning it *ON*. In the OFF-state, the gate drive circuit will pull the gate of the ON-state FET to the limit voltage, turning it *OFF*. This stops the current from flowing through the ON-state FET, turning it *OFF*. This is the basic principle of how the NTMFS4H013NFT3G works.
In conclusion, the NTMFS4H013NFT3G is an ideal choice for high current applications. Its integrated gate drive circuit simplifies its circuit design and offers improved reliability. Its wide range of applications includes power inverters, AC/DC converters, DC/DC converters, motor control systems, power switches, welding machines, UPS systems and any other application requiring high current and high speed switching.
The specific data is subject to PDF, and the above content is for reference
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