NTMFS4897NFT3G

The NTMFS4897NFT3G is a N-channel FET technology transistor designed for use in high-frequency, high-power switching applications. The FET contains a monolithic n-channel MOSFET and drain-source protection diode, which together enable the device to have a high switching speed and the ability to withstand high power levels. The NTMFS4897NFT3G is typically used in applications such as power conversion, DC/DC switching, AC/DC power supplies, pulse power, RF power amplifiers, high power switching, motion control, and low noise amplifiers.

The NTMFS4897NFT3G is a voltage-controlled FET device, meaning that the gate voltage controls the current flowing through the drain and source pins. The FET is a voltage-controlled device because when a voltage is applied to the gate, a low drain to source resistance is created, allowing the current to flow. It works on the principle of transistor action, where an applied voltage is used to control the flow of electrical current in a circuit.

The FET has a breakdown voltage rating of 16.7V, making it able to withstand large voltages without damage. In addition, it has a Drain-Source on-resistance of 0.64Ω, allowing it to have a low impedance, reducing power losses and increasing its current handling capacity. The FET also features a fast switching time of 1/3us, which makes it suitable for high-frequency applications such as pulse power and RF power amplifier.

The FET has a drain-source breakdown voltage of 16.7V, an on-resistance of 0.64Ω, and a maximum drain current rating of 24A. The NTMFS4897NFT3G features a maximum drain-source voltage of 100V and is available in a surface-mount package, making it suitable for a wide range of applications. In addition, the FET has a low power consumption, making it energy-efficient.

The NTMFS4897NFT3G is a device suitable for many applications due to its fast switching time, high voltage ratings, and low power consumption. It is especially important in applications that require high-power switching, such as power conversion and pulse power, or high-frequency applications such as RF power amplifiers. The NTMFS4897NFT3G is a versatile device and its low gate capacitance and gate charge makes it useful for low-noise amplification, making it suitable for audio applications.

In summary, the NTMFS4897NFT3G is a single N-channel FET designed for high frequency, high-power switching applications. It features a breakdown voltage rating of 16.7V, an on-resistance of 0.64Ω, and a fast switching time of 1/3us. It is suitable for applications such as power conversion, DC/DC switching, AC/DC power supplies, pulse power, RF power amplifiers, high power switching, motion control, and low noise amplifiers.