NTMFS4C760NT1G Allicdata Electronics
Allicdata Part #:

NTMFS4C760NT1G-ND

Manufacturer Part#:

NTMFS4C760NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 46A SO8FL
More Detail:
DataSheet: NTMFS4C760NT1G datasheetNTMFS4C760NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Part Status: Active
Description

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NTMFS4C760NT1G is a N-channel enhancement mode power MOSFET transistor with excellent performance in terms of current handling capability, speed and working voltage. This high-speed MOSFET is manufactured using the company’s proprietary process and has a threshold voltage of 4.0V and a maximum drain current of 7.6A. It is primarily used in power management and switching applications, and is a popular choice for automotive, consumer and industrial applications.

A MOSFET, or metal oxide semiconductor field effect transistor, is a type of transistor that uses an electric field to control the flow of current. These transistors use a gate voltage to control the electrons in the channel and have a higher current density than other types of transistors. Because of their high switching speed, MOSFETs are widely used in switching power supply applications and as power electronic components. Because of their low power consumption and wide voltage range, they are also ideal for applications where energy efficiency is important.

Power MOSFETs are three-terminal devices with the Gate, Drain and Source terminals. The Gate terminal is used to control the current through the device, the Drain and Source terminals are used to connect the circuit. When the Gate voltage is increased, the conducting channel on the Drain side expands, allowing more current to flow through the device. This is known as “enhancement mode”, where the current flow is determined by the voltage applied to the Gate terminal.

The NTMFS4C760NT1G is a particularly robust power MOSFET transistor and is capable of handling much higher levels of power than the standard MOSFET transistor. It’s drain-to-source breakdown voltage and maximum drain current rating are 4.0V and 7.6A respectively, making it suitable for power management applications in which high levels of power are required. The low on-resistance rating of this device makes it a suitable choice for battery-operated applications such as laptops.

In terms of its typical applications, the NTMFS4C760NT1G can be used for various types of power control. For example, it can be used in switching power supplies, audio amplifiers, motor control applications and other high-frequency circuits. Additionally, it can be used in high frequency switching circuits and high switching speed power supplies. Because of its robust nature the device has become popular with automotive applications too, being used as battery protection, in power management and in motor drives.

In summary, the NTMFS4C760NT1G is a power MOSFET transistor that is popular for applications where high levels of power are required. It is used as a switching component in many types of power related applications and is known for its excellent performance in terms of current handling capability, speed and working voltage. Its high-speed N-channel enhancement mode means that it is suitable for applications where energy efficiency is important too.

The specific data is subject to PDF, and the above content is for reference

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