NTMFS4C09NAT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMFS4C09NAT1G is a single-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device. It is part of the 900V PowerTrench® MOSFET family from ON Semiconductor, offering low on-resistance, high threshold voltage, and low gate charge. This device is specifically designed for low-side switch applications.

Application Field

The NTMFS4C09NAT1G is suitable for a wide variety of automotive and industrial applications, including motor control, DC/DC converters and load switches, power supplies, and DC/AC inverters. It is also suitable for applications that require high voltage and high current performance, such as DC motor and solenoid control.

Working Principle

The NTMFS4C09NAT1G is a single-gate MOSFET device. It consists of three terminals: the gate, drain, and source. The gate terminal is used to control the current flow between the drain and source terminals. When the gate voltage is applied, the voltage between the two terminals is increased and a current begins to flow. The voltage and current can then be controlled by adjusting the gate voltage.

When the gate voltage is applied, the MOSFET channel is formed beneath the gate insulator. This channel is filled with a delicate dielectric layer, which separates the gate and source contacts. The current is conducted between the drain and source by holes in this dielectric layer, which are controlled by the gate voltage. Therefore, when the gate voltage is increased, more current can be conducted through the channel.

The NTMFS4C09NAT1G has an on-resistance of 0.9 ohms and is rated for 900 V. With its low on-resistance and high threshold voltage, it is suitable for high voltage and high current applications that require reliable and robust performance. The device also features a low gate charge, which makes it an ideal choice for applications that require fast switching times.

The specific data is subject to PDF, and the above content is for reference