Allicdata Part #: | NTMFS4H02NT1G-ND |
Manufacturer Part#: |
NTMFS4H02NT1G |
Price: | $ 1.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 37A SO8FL |
More Detail: | N-Channel 25V 37A (Ta), 193A (Tc) 3.13W (Ta), 83W ... |
DataSheet: | NTMFS4H02NT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.42002 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Ta), 193A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2651pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 3.13W (Ta), 83W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NTMFS4H02NT1G is a high-speed MOSFET device that has been designed to provide power and efficiency output in a variety of applications. This particular device can be used in both digital and analog applications. It has a very low threshold voltage, which makes it suitable for operating in high power and low-voltage other applications.Its main application is in the switching of power and electronic circuits. This device can be used in applications such as motor control, audio amplifiers, medical equipment, and switching systems. In addition to this, this device also offers a high switching frequency, making it very suitable for frequency-sensitive devices.The device features two independent sources: the source and the drain. The source is the output of the device, while the drain is the input. The two sources are connected through a gate, which controls the flow of the current. The device is activated through the use of a voltage applied to the gate, which in turn controls the flow of current.The device works on the principle of field-effect transistor (FET). FETs are transistors that use the electric field of a voltage applied to the gate to control the flow of currents. This principle is also used in other electronic components such as field-effect transistors, diodes, and transistors.The NTMFS4H02NT1G works in a very similar manner as other FETs. It leaves the source and drain connected in a constant voltage level until the voltage is applied to the gate. When the voltage is applied to the gate, the current flows through the device, turning it on and off. It can be used to control the flow of current in a variety of other applications.This device is characterized by its very fast switching speed. It can switch from high to low levels in less than 10 nanoseconds, which is much faster than other FETs. This makes it suitable for use in very sensitive systems that require very fast switching times.This device is also advantageous because of its low on-state resistance. This means that it has a very small amount of power loss when in operation. This helps to make the device more energy efficient and can help to reduce operational costs in certain applications. In conclusion, the NTMFS4H02NT1G is a versatile MOSFET device that can be used in a variety of applications including in motor control, audio amplifiers, medical equipment, and switching systems. It is characterized by very fast switching speeds and low on-state resistance. These features make it an ideal choice for applications that require accurate control and power efficiency.
The specific data is subject to PDF, and the above content is for reference
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