NTMFS5H400NLT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.3W (Ta), 160W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7700pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	0.8 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	46A (Ta), 330A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTMFS5H400NL is a single N-channel enhancement mode MOSFET manufactured by ON Semiconductor. Based on all the features and specifications, it is a highly ideal transistor for a wide range of applications.The device operates with the 5.0V operating gate to source voltage and has drain source voltage rating of 40V with a drain current of 8A. The current rating makes this device suitable for most low voltage applications.In comparison to other transistors, this device has a much lower on-state resistance (RDSon) than other transistors of the same type. This helps reduce power in terms of conduction losses, which reduces energy costs.The NTMFS5H400NL transistor is also designed to be highly efficient. This means that it won\'t dissipate unnecessarily high amounts of power during operation. As a result, this device helps reduce costs while still providing good efficiency.Also, due to the high gate to source voltage, the device has a significantly reduced leakage current. This feature further reduces power consumption, which increases the device\'s efficiency.Working principle of the NTMFS5H400NL transistor is quite simple. It uses a voltage applied to the gate (gate to source) to control the amount of current that can flow through the drain and source. When the gate voltage is high, the drain-source channel will be in an open state allowing current flow. When the gate voltage is low, the channel will be in a close state preventing current flow.The device is especially useful for analog and digital applications. It can be used in circuits for voltage regulation, power switching, motor control, and other various applications. It is also highly used in automotive applications due to its high drain current and low on-state resistance.In conclusion, NTMFS5H400NL is a single N-channel enhancement mode MOSFET manufactured by ON Semiconductor. It is a highly efficient transistor with a low on-state resistance and a high gate to source voltage. It can be used in a wide variety of applications, from voltage regulation and power switching to motor control and automotive applications.

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