NTMFS5H600NLT1G Discrete Semiconductor Products

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They are one of the most essential components in the industrial, power electronics and automotive industries and are capable of controlling very large currents with the relative flexibility necessary to make them ideal for many applications. NTMFS5H600NLT1G is no exception, being a single-source MOSFET designed for high-power switching applications from an on-state of 120 amp. short circuit rated at 875 volts. This MOSFET is particularly suitable for switching applications in which heavy loads are expected.

First, the MOSFET is a type of transistor designed to provide a low-level drain current (or any other current) in response to a low source current or voltage. They are usually used for boolean logic functions, such as control switching, power switching or logic gates. These devices are also used for interfacing digital logic with other devices, such as motors, sensors, etc. In this particular device, it is also capable of providing higher current levels, allowing more current to be drawn from the source than is available from other transistors.

Now, the NTMFS5H600NLT1G application field and working principle is often used in power electronics and automotive industries and has some distinct features. The product is manufactured by ON Semiconductor and it is a true single-source MOSFET, which can be used in applications requiring high-power switching. It has a high on-state current up to a maximum of 120 A at temperatures up to 175°C and is able to manage a peak pulse of up to 780 A for up to 1ms. It also has a short-circuit rating of 875 V at a zero-volt gate threshold voltage and a low 10mΩ ON-resistance for improved efficiency.

Unlike most MOSFETs, this particular NTMFS5H600NLT1G device has an integrated Schottky diode to reduce reverse recovery time and enhance efficiency. Furthermore, it offers two different body diodes that can be used in different applications, depending on the need. Also, it has a built-in temperature-sensing diode, derating thermistor and current-sensing resistor in order to help maintain the overall temperature and performance of the device.

In terms of working principle, this single-source MOSFET works within three basic states, namely OFF, linear, and saturated. During the OFF state, no current can flow through the device’s channel due to the gate-source voltage being below the device threshold voltage. When the gate signal is applied, the MOSFET enters the linear region, which is when an active channel is formed between the drain and source and current can flow through the device. During saturation, the MOSFET channel is fully open and the current is a maximum, meaning the voltage drop is as low as possible.

To summarize, the NTMFS5H600NLT1G single-source MOSFET is designed for high-power switching applications from an on-state of 120amp. It has built-in features such as an integrated Schottky diode, two different body diodes, a temperature-sensing diode, derating thermistor and a current-sensing resistor. In terms of working principle, the device works within three basic states: OFF, linear and saturated, with current flowing through the channel in the linear and saturated states.

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