Allicdata Part #: | NTMFS4121NT3G-ND |
Manufacturer Part#: |
NTMFS4121NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11A SO8FL |
More Detail: | N-Channel 30V 11A (Ta) 900mW (Ta) Surface Mount 5-... |
DataSheet: | NTMFS4121NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.25 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FETs (field-effect transistors) and MOSFETs (metal-oxide-semiconductor field-effect transistors) are a type of switching device that can control the flow of electricity in a circuit. They are used in a wide range of applications, from small, low-power systems to high-power industrial applications. One particular FET is the NTMFS4121NT3G, which is a single, insulated-gate, single-channel FET. This article examines the application field and working principle of the NTMFS4121NT3G.
The NTMFS4121NT3G is a typical FET, with a single insulated-gate and single channel. Its construction consists of an N-type semiconductor, a dielectric isolation layer, a metal gate, an isolation layer, and an anode layer. The gate is isolated from the other components by the isolation layer. This insulation prevents unwanted switching and allows for greater control over the device’s switch time. It is designed for applications that require both low power and high-current demands, such as power supply control and switching operations. The device is also suitable for use in high voltage applications, such as in motor control and power switching.
The working principle of the FET is similar to a mechanical switch. When a voltage is applied to the gate, a small amount of current flows between the gate and drain. This current creates a channel, through which current can flow from source to drain. The size of the channel is determined by the amount of voltage applied to the gate. By varying the gate voltage, the size of the channel can be adjusted, allowing the device to control the current flow in a circuit.
The NTMFS4121NT3G can be used for both static and dynamic applications. In static applications, the device can be used to switch between two states, such as on and off. In dynamic applications, the device can be used to continuously adjust the current flow in a circuit. This makes the device ideal for power-supply control, switching operations, motor control, and other high-current applications.
The NTMFS4121NT3G is a robust, efficient device capable of controlling both static and dynamic applications. Its insulation layer helps to protect it from unwanted switching and allows for precise control over the switch time. Its single-channel design also provides a reliable, high-performance solution for controlling current in both low-power and high-voltage applications. For these reasons, the NTMFS4121NT3G is well-suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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