NTMFD4952NFT3G Allicdata Electronics
Allicdata Part #:

NTMFD4952NFT3G-ND

Manufacturer Part#:

NTMFD4952NFT3G

Price: $ 1.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 10.8A SO8FL
More Detail: MOSFET N-CH 30V 10.8A SO8FL
DataSheet: NTMFD4952NFT3G datasheetNTMFD4952NFT3G Datasheet/PDF
Quantity: 1000
1500 +: $ 1.01430
Stock 1000Can Ship Immediately
$ 1.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Package / Case: 8-PowerTDFN
Description

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The NTMFD4952NFT3G is a type of Field-Effect Transistor (FET), specifically a Metal-Oxide-Semiconductor FET or MOSFET. Field-effect transistors are a type of semiconductor device that exploit the principles of electrostatics to switch current between two terminals in a circuit. The NTMFD4952NFT3G is a single-gate FET, meaning that is has just one active gate terminal that can receive and control electricity.

The NTMFD4952NFT3G is designed for a variety of applications including power electronics, voltage control, and general-purpose analog control. It is very common in Voice over Internet Protocol (VoIP) communication systems and is used to control the input, amplification, and output of audio signals. The NTMFD4952NFT3G is also commonly used in automotive electronics and body control systems for current regulation and temperature sensing. Lastly, the NTMFD4952NFT3G is used in optoelectronic applications, as well as robotic navigation and navigation guidance.

Like other types of field-effect transistors, the NTMFD4952NFT3G works by using a gate that produces an electrostatic field when voltage is applied. This field attracts or repels electrons from the semiconductor material on either side of the gate. When the gate is off, electrons can flow between the two regions, creating a conductive path for current to flow. When the gate is on, electrons cannot flow, preventing current from passing. This allows the NTMFD4952NFT3G to act as a switch and control current flow in a circuit.

The NTMFD4952NFT3G also has a number of other features that make it attractive for many electronic applications. It has a low on-resistance and a very low turn-on and turn-off delay, making it ideal for high-speed switching applications. Its high gate-to-source breakdown voltage also makes it suitable for high-voltage applications. In addition, the NTMFD4952NFT3G is available in a wide range of packages, including small outline and surface mount packages.

Overall, the NTMFD4952NFT3G is a versatile and powerful single-gate FET. Its ability to control current flow in a circuit makes it an essential component in a variety of applications, from VoIP communication to automotive electronics and beyond. Its other features, such as its low on-resistance and high gate-to-source breakdown voltage, make it an ideal choice for a variety of high-speed and high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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