NTMFD4C20NT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	9.1A, 13.7A
Rds On (Max) @ Id, Vgs:	7.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	970pF @ 15V
Power - Max:	1.09W, 1.15W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

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Introduction

The NTMFD4C20NT3G is a four-channel, N-channel enhancement field-effect transistor (FET) array designed to provide an efficient alternative to discrete components. This product series offers an easy-to-use, cost-effective solution that can cover a wide range of applications.

Application Fields

NTMFD4C20NT3G FET array is suitable for use in low-side or high-side switching applications in industrial, automotive, medical, and telecom control and interface circuits. The product series offers high dielectric strength, excellent thermal balance desirable at high temperatures, and it can switch high source or sink currents. The NTMFD4C20NT3G can be used in both linear and switching applications, providing a reliable performance in a wide range of conditions. The high-speed switching capability combined with fast discharge time provides excellent control for complex timing requirements. The NTMFD4C20NT3G can be used for power supply regulation, motor control, load switching, and noise rejection.

Working Principle

The NTMFD4C20NT3G is a four-channel FET array that operates using the enhancement mode. Enhancement mode FETs are transistors in which the output current is determined only by the applied voltage to the gate with respect to the source. When the gate source voltage (Vgs) is increased, the amount of current flowing through increases until it reaches the "on" state. At this point, the current is determined by the applied voltage and the transistor\'s internal characteristics.When the voltage between the gate and the source is decreased, the transistor enters the "off" state, and no current will flow. This principle of operation is used to control and regulate the amount of current flowing through the FET, and thus, provide a reliable performance and efficient operation.The NTMFD4C20NT3G is designed to provide low-side and high-side switching capabilities. In a low-side application, the gate-source voltage is applied to the source in order to attain the “on” state, while in a high-side application, the gate-source voltage is applied to the drain in order to attain the “on” state.

Conclusion

The NTMFD4C20NT3G is an easy-to-use, cost-effective FET array designed to provide a reliable performance and efficient operation in a wide range of applications. With its high-speed switching capability and fast discharge time, the NTMFD4C20NT3G is able to provide excellent control for complex timing requirements. Its ability to switch between low-side and high-side applications enables the NTMFD4C20NT3G to offer a versatile solution for a variety of application fields.

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