NTMFD4C88NT1G Allicdata Electronics
Allicdata Part #:

NTMFD4C88NT1G-ND

Manufacturer Part#:

NTMFD4C88NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 8DFN
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 1...
DataSheet: NTMFD4C88NT1G datasheetNTMFD4C88NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)
Description

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NTMFD4C88NT1G Application Field and Working Principle

The NTMFD4C88NT1G is a low-frequency field-effect transistor (FET) array, which can be used in a variety of applications. It is a four-channel device with a voltage sensitivity of up to 100 volts, a temperature range of -55°C to 125°C, and a minimum operating current capacity of 8mA. The device combines N-channel and P-channel FETs in one package and can be used for audio, high speed data transmission and power switching applications.

An N-channel MOSFET array consists of two or more FETs connected in parallel. The array effectively acts as a single device, allowing for the control of multiple devices simultaneously. This makes the NTMFD4C88NT1G useful for applications where a large amount of current needs to be handled efficiently and simultaneously.

Working Principle

The NTMFD4C88NT1G operates on the principle of MOS Field Effect Transistors (MOSFETs). A MOSFET is a voltage-controlled device that amplifies a small input voltage to a higher output. The NTMFD4C88NT1G has two terminals, gate and drain. When a positive voltage is applied to the gate terminal, a current is allowed to flow through the drain terminal. The amount of current that flows is determined by the gate voltage. This allows the NTMFD4C88NT1G to be used for a variety of functions, such as amplifying signals and controlling power.

The NTMFD4C88NT1G also has a built-in protection circuit to prevent over-current and over-voltage damage. This is done by placing a diode between the gate and drain terminals. When an excess current flow or over-voltage is present, the diode will conduct and divert the excess current away from the device.

Application Field

The NTMFD4C88NT1G can be used for a variety of applications, such as audio systems, high speed data transmission and power switching. It is also suitable for automotive, industrial and consumer applications.

The NTMFD4C88NT1G has a wide operating temperature range, making it suitable for automotive and industrial applications. It is also suitable for consumer applications, thanks to its low cost, high frequency range and low noise characteristics.

The NTMFD4C88NT1G has a built-in protection circuit, making it highly reliable and suitable for a variety of applications. It is also suitable for high speed data transmission applications, thanks to its fast switching time and low noise characteristics.

The NTMFD4C88NT1G is a versatile device and can be used for a variety of applications. It is suitable for audio, high speed data transmission and power switching applications, and can also be used in automotive, industrial and consumer applications. It has a wide operating temperature range, a built-in protection circuit and fast switching time, making it highly reliable and suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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