NTMFD5C470NLT1G Discrete Semiconductor Products

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The NTMFD5C470NLT1G is a MOSFET array. With its high current carrying capability, low RDS-on and low gate charge, it is suitable for switching power applications. It consists of four N-channel MOSFETs with a three-terminal voltage regulator currently rated at 570W at 25°C ambient temperature.

Application Field

The NTMFD5C470NLT1G MOSFET array is typically used in power electronic converters, such as DC-DC converters, AC-DC rectifiers, and motor control applications. It has been especially designed for switching power applications, like DC-DC converters, AC-DC rectifiers, and motor control applications. Such as:

• High efficiency DC-DC converters or DC-AC inverters
• Switch Mode Power Supplies (SMPS)
• Power over Ethernet (PoE) systems
• Transformerless inverters
• Motor drive systems

It is suitable for use in residential, commercial and industrial applications, such as electric drives and automation objects, lighting, heating and air conditioning, security systems, Measurement and Control systems and home appliances.

Working Principle

The NTMFD5C470NLT1G MOSFET array works on the principle of MOSFETs and their gate-bias voltage control. It is composed of four N-channel MOSFETs. These MOSFETs are connected in a parallel and logic-level compatible configuration. That is, the FETs can be operated at the same logic levels, performing the same switch operation at the same time.

The NTMFD5C470NLT1G MOSFET array can deliver a low on-state resistance, allowing high current carrying capability with low power dissipation. The low source-drain on-state resistance enables low power dissipation in applications with large load current. The low gate voltage is also an advantage of the MOSFET array, allowing a cost-effective design. The high speed switching capability ensures fast switching operation and the ability to regulate load current accurately.

The NTMFD5C470NLT1G MOSFET array is protected against ESD (electrostatic discharge), EMI (electromagnetic interference), and voltage transients. It also has a built-in thermal shutdown feature which makes sure that the MOSFETs are not damaged due to excessive power dissipation. The MOSFET array is also equipped with soft-start that prevents large inrush currents when the power supply voltage is applied.

Conclusion

The NTMFD5C470NLT1G MOSFET array is a cost effective and reliable solution for switching power applications. It has a low resistance, high current capability and thermal overload protection all built in. This, coupled with its EMI and ESD protection, makes it an ideal choice for a wide range of applications where desnity and reliability are essential.

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