NTMFD5C680NLT1G Discrete Semiconductor Products

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NTMFD5C680NLT1G Application Field and Working Principle

Introduction

The NTMFD5C680NLT1G products manufactured by NXP Semiconductors are a family of vertical dual N-Channel power MOSFETs based on the advanced trench process. This technology enables the NTMFD5C680NLT1G power MOSFETs to have low gate charge, low on-state resistance and high performance. All these make them functionally suitable for a wide range of applications.

Application Field

The NTMFD5C680NLT1G is ideal for applications such as lighting, power supplies, motor drives, and white goods. It is also suitable for a wide range of applications such as frequency control, motor and motor control, switched mode power supplies, and power management in general. The product is available in a TO-268 package, allowing it to be mounted on a heatsink for optimum thermal performance.

The NTMFD5C680NLT1G is a vertical dual N-Channel power MOSFET with a low gate charge, low on-state resistance and high performance. It is an ideal device for lighting, power supplies, motor drives, white goods, frequency control, motor and motor control, switched mode power supplies, and power management in general.

Features and Benefits

• Low gate charge
• Low on-state resistance
• High performance
• High switching frequency
• Easy to mount on a heatsink
• Side-gate structure

Working Principle

The NTMFD5C680NLT1G is a vertical dual N-Channel power MOSFET based on the advanced trench process. This technology enables the power MOSFET to have a low gate charge, low on-state resistance and high performance. The vertical structure increases the on-state resistance, because it increases the distance between the positive and negative source/drain channels of the device.

The NTMFD5C680NLT1G has a side-gate structure. This structure provides more efficient control over the gate voltage. The gates are discretely located outside the source/drain region. This feature ensures easier to implement control of the on-state resistance. Additionally, the side-gate structure minimizes the effect of capacitances, making the NTMFD5C680NLT1G more suitable for high-frequency switching applications.

The NTMFD5C680NLT1G has a low gate charge. This feature allows for a much faster switching speed between the on and off states. Additionally, the low on-state resistance of this product allows for higher current handling capabilities.

Conclusion

In conclusion, the NTMFD5C680NLT1G is a versatile vertical dual N-Channel power MOSFET designed to provide a good balance between high performance and cost-effectiveness. It is suitable for a range of applications such as lighting, power supplies, motor drives, and white goods. This device has a low gate charge and low on-state resistance, as well as a side-gate structure which adds improved control and also minimizes capacitance. This makes the NTMFD5C680NLT1G suitable for high-frequency switching applications.

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