Allicdata Part #: | NTMFS4833NAT1G-ND |
Manufacturer Part#: |
NTMFS4833NAT1G |
Price: | $ 1.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 191A SO8FL |
More Detail: | N-Channel 30V 16A (Ta), 191A (Tc) Surface Mount 5... |
DataSheet: | NTMFS4833NAT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.21716 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 191A (Tc) |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 11.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NTMFS4833NAT1G is a type of MOSFET which is the short form of the metal-oxide-semiconductor field-effect transistor (MOSFET). It has a single transistor structure and is part of a group of full series offering varying voltage and current ratings. The NTMFS4833NAT1G is a single N-Channel MOSFET that is housed in a flat, low profile non-hermetic encapsulated package with an innovative lead form. It is capable of delivering reliable performance and results in a diverse array of applications, from low voltage to high voltage and low current to high current.
The NTMFS4833NAT1G is the ideal choice for designers looking for a highly reliable and efficient device to comply with their applications. With a maximum drain-source voltage of 40V and a maximum continuous drain current of 10A, this MOSFET is suitable for applications ranging from consumer electronics to industrial systems. It also highlights low gate threshold and low on-resistance features that make it the perfect choice for designers targeting high efficiency and switching stability.
The NTMFS4833NAT1G is able to withstand high-temperature and harsh environments, making it suitable for use in applications such as motor control, power supplies, and automotive systems. The NTMFS4833NAT1G’s low on-resistance and low gate capacitance characteristics make it ideal for applications such as Class-D audio and high-speed switching. This MOSFET also plays a major role in improving the switching speed and efficiency of many designs.
The working principle of the NTMFS4833NAT1G is relatively simple. As a MOSFET, it is composed of two metal semiconductor layers; the gate and the source. When an electric current is applied to the gate, it produces an electric field that modulates the current flowing through the semiconductor layers; this is called the field-effect, and it is the main working principle of the NTMFS4833NAT1G. This device can also be described as an electronic switch, as it is able to be used to control the flow of current between two points in a circuit.
In conclusion, the NTMFS4833NAT1G is an efficient single-channel MOSFET that offers good performance and reliability when integrated into electronic circuits. Its innovative lead form and low profile non-hermetic encapsulated package help to reduce its size without reducing its performance. This versatile MOSFET is suitable for applications ranging from consumer electronics to motor control and industrial systems.
The specific data is subject to PDF, and the above content is for reference
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