NTMFS4852NT1G Allicdata Electronics

NTMFS4852NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4852NT1GOSTR-ND

Manufacturer Part#:

NTMFS4852NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 16A SO8FL
More Detail: N-Channel 30V 16A (Ta), 155A (Tc) 900mW (Ta), 86.2...
DataSheet: NTMFS4852NT1G datasheetNTMFS4852NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4852NT1G is a single N-Channel PowerTrench MOSFET that is designed to handle the high power demands seen in portable devices. This power MOSFET is available in a TO-252 (DPAK) package, making it ideal for a wide range of applications. It is designed to efficiently handle the high power demands needed for both linear and switching operations. The NTMFS4852NT1G is designed with an N-Channel PowerTrench technology that maximizes current handling capability within a small footprint.

The NTMFS4852NT1G power MOSFET is suitable for a wide range of applications, including motor control, lighting, DC-DC converters, switching converters, and battery management. It is also suitable for a variety of other applications such as high-side switching and low-side switching applications, as well as switching and linear regulators.

The NTMFS4852NT1G power MOSFET utilizes a N-Channel PowerTrench technology to achieve optimal power efficiency. This advanced technology allows for high current handling capability and low on-resistance in a small footprint, making it beneficial for space-constrained applications. Additionally, the NTMFS4852NT1G power MOSFET offers low gate charge and low on-resistance to maximize power efficiency. This power MOSFET is also designed to handle higher input voltages up to 20V.

The NTMFS4852NT1G power MOSFET works by utilizing the voltage difference between its source and gate terminals to create a current. This current is then applied across the MOSFET’s drain and source terminals, allowing for the efficient handling of high power demands. The NTMFS4852NT1G power MOSFET also includes a number of protection features, such as over-temperature protection, over-voltage protection, and reverse polarity protection. Furthermore, the NTMFS4852NT1G is designed with a short-circuit protection feature, which helps ensure that the device remains safe and secure in the event of a short-circuit.

Overall, the NTMFS4852NT1G power MOSFET is designed to be highly efficient, making it an ideal choice for a variety of applications. Its N-Channel PowerTrench technology allows for maximum power efficiency within a small footprint. Additionally, the NTMFS4852NT1G power MOSFET includes a number of protection features, such as over-temperature, over-voltage, and reverse polarity protection to help keep it safe and secure. The NTMFS4852NT1G is a versatile and reliable device, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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