Allicdata Part #: | NTMFS4933NT1G-ND |
Manufacturer Part#: |
NTMFS4933NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 20A SO8FL |
More Detail: | N-Channel 30V 20A (Ta), 210A (Tc) 1.06W (Ta), 104W... |
DataSheet: | NTMFS4933NT1G Datasheet/PDF |
Quantity: | 1515 |
Package / Case: | 8-PowerTDFN, 5 Leads |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 210A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 62.1nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10930pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.06W (Ta), 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
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The NTMFS4933NT1G is a single N-Channel Logic Level Trench MOSFET (Egates). It is a type of e-MOSFET primarily found in power electronics, and it is also used in other applications where fast switching and precise control are important. The NTMFS4933NT1G offers very low gate-charge and high breakdown voltage, making it suitable for use in a variety of applications requiring high energy density.
An e-MOSFET works by creating an electric field or barrier between its source and drain terminals. This electric field or barrier prevents current from flowing between the source and drain until it is overcome by a certain threshold voltage. When this threshold voltage is applied, the resistance between the source and drain terminals is lowered and current can begin flowing.
The NTMFS4933NT1G is part of a family of N-channel e-MOSFETs, designed for use in a wide range of applications. It can be used for switching high-current loads, as a high-speed power switch, and as a DC-DC converter in power electronics. The device is also suitable for use in motor control, lighting applications, industrial process control, and other high speed applications.
The NTMFS4933NT1G has a maximum continuous drain-source voltage (VDS) of 30V and a maximum current rating (ID) of 49A. It has very low on-resistance, with a rated RDS(ON) of 0.0085ohm. This low resistance makes the device ideal for applications where high current is required and very fast switching is essential.
The NTMFS4933NT1G also features very low Gate-Drain (G-D) capacitance and very low Gate-Source (G-S) capacitance, making it suitable for applications where fast signal transition times are important. It also features a low input capacitance, which helps reduce its total power consumption.
The NTMFS4933NT1G is a very popular and widely used e-MOSFET device, due to its low on-resistance, low capacitance, and fast switching capabilities. It is a great choice for applications requiring high energy density, as well as for applications where very fast signal transition times are required. It is a very reliable device, and is capable of handling high current loads, making it suitable for use in a variety of situations.
The specific data is subject to PDF, and the above content is for reference
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