NTMFS4C03NT1G Allicdata Electronics

NTMFS4C03NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4C03NT1GOSTR-ND

Manufacturer Part#:

NTMFS4C03NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 30A SO8FL
More Detail: N-Channel 30V 30A (Ta), 136A (Tc) 3.1W (Ta), 64W (...
DataSheet: NTMFS4C03NT1G datasheetNTMFS4C03NT1G Datasheet/PDF
Quantity: 1500
Stock 1500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3071pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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N-chanel Metal Oxide Semiconductor Field Effect Transistor (NTMFS4C03NT1G) is a type of field effect transistor (FET). It is a three-terminal electronic switch device that uses the electrical field created by an applied voltage to control the current flow between the source and drain. It works by creating a voltage-controlled electric field in the semiconductor material between the source and drain, which in turn modifies the conductivity of the channel. In this way, the voltage applied to the gate terminal forms an electric field in the oxide (insulator) layer between the source and drain. This electric field induces changes in the conductivity of the underlying semiconductor material, thus allowing the current to be controlled by the applied voltage at the gate terminal.

The NTMFS4C03NT1G is a single-gate FET (SG-FET), meaning ithas one additional terminal (gate). This additional gate terminal allows the current flow between the source and drain to be adjusted via a voltage applied to the gate. In this way, electrode current can be easily adjusted without changing the drain-source voltage. Therefore, it is ideal for use in circuits that require CMRR (Common Mode Rejection Ratio) improvement, linearity enhancement, high-voltage switching, or voltage control.

One of the most important application fields for NTMFS4C03NT1G is in power management circuits. It can be used as an adjustable current limit switch or as an improved voltage regulator. The NTMFS4C03NT1G can be used to automatically adjust the output current of a power supply, thus helping to achieve precise voltage control and improve power efficiency. This device is also often used in the automotive industry as a voltage regulator to control the secondary ignition system in the engine, as well as in the electronic control units of motorcycles.

In addition to its use in power supply management and voltage regulation, the NTMFS4C03NT1G can also be used to switch transistors such as bipolar junction transistors (BJT) and metal-oxide semiconductor transistors (MOSFETs). Its ability to control and limit the current flow through transistors helps to prevent the transistors from becoming overloaded, which can lead to device failure or electrical fires. As the NTMFS4C03NT1G can be operated at higher voltages and currents than conventional switches, it is becoming increasingly popular in the manufacture of high-power transistor switches.

All in all, the NTMFS4C03NT1G can be used as an adjustable voltage regulator, adjustable current limit switch, or high-power transistor switch. Its ability to rapidly adjust the current flow and its relatively high power output rating make it the ideal choice for circuitry that requires precision control and high-power switching. It is commonly used in power supply, automotive, and electronic control circuits.

The specific data is subject to PDF, and the above content is for reference

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