NTMFS4C56NT1G

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The NTMFS4C56NT1G is a single enhancement mode power field effect transistor (FET) with integrated diodes. Developed by ON Semiconductor, this product is used in a variety of applications including switching power supplies, DC/DC converters, and motor controllers.

The NTMFS4C56NT1G device includes an N-type metal oxide semiconductor field-effect transistor (MOSFET) connected in a monolithic structure with a built-in P-type drain implant. It operates in a single “channel-enhancement” mode, meaning that they are normally off, and voltage must be applied to the gate to turn the device on.

The NTMFS4C56NT1G is designed for low voltage, low power switch mode DC-DC converters. The device is designed with an integrated diode for improved immunity against switching transients. It utilizes a high cell density architecture to help minimize on-resistance (RDS(on)) for improved efficiency in switch mode power supplies.

This MOSFET is capable of a 17V maximum drain to source voltage (VDS) and a 12A maximum drain current (ID). The RDS(on) is rated at 2.6Ω, with a maximum gate threshold voltage (VGS) of 4V. The device is specified over the operating temperature range of -40 to +150°C.

The device features a low on-resistance design and high-cell density architecture for improved efficiency. In addition, it has a built-in diode which eliminates the need for an external protection diode, thus helping to reduce board space requirements and cost. The built-in P-channel MOSFET helps to control the input voltage fluctuation in a power supply design. This contributes to better power regulation and improved immunity against switching transients.

The NTMFS4C56NT1G device is well suited for a wide range of applications, such as DC/DC converters, motor controllers, pulse-width modulators (PWM), power supplies, and audio amplifiers. It is a cost effective solution for a wide range of power management applications while providing improved efficiency and reduced board space requirements.

In summary, the NTMFS4C56NT1G is a single channel enhancement mode power FET with integrated diodes and low on-resistance design. It is well-suited for numerous power management applications and is capable of delivering improved efficiency and reduced board space requirements. Moreover, its built-in P-channel MOSFET helps to control input voltage fluctuation and helps safeguard against switching transients. The NTMFS4C56NT1G is a cost-effective solution for a variety of noise sensitive power management applications.

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