NTMFS4H013NFT1G

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The NTMFS4H013NFT1G is a power MOSFET transistor which has been specifically designed to suit a range of applications requiring low on-resistance and rugged performance characteristics. It has a low threshold voltage and tall cavities which make it suitable for operating at high speeds and in noisy environments. The NTMFS4H013NFT1G is suitable for power switching applications, amplifier and driver circuits, industrial, medical and automotive applications.

The NTMFS4H013NFT1G is a single gate MOSFET transistor in a TO-220 package. It has an extended drain lead and gate electrode which enables gate control of up to 200 mA. This device features a high cell density allowing it to be used in very high-current applications. Its low threshold voltage makes it suitable for switching in low-input voltage and supply voltage situations.

The NTMFS4H013NFT1G is manufactured with the latest MT-MOSFET technology which ensures superior performance and reliability for a wide range of applications. This device has both source and source-drain diodes integrated internally. The on-resistance is low and the Figer HSPICE and Pspice modelling technology provide high accuracy modelling in application design and experiments.

The NTMFS4H013NFT1G operates by allowing current to flow between the source and drain and allowing voltage to be applied to the gate terminal, thus controlling the flow of current. The voltage applied to the gate terminal determines the resistance between the source and drain and thus controls the device\'s conductivity. The device can be used as a switch, amplifier and driver in various applications.

The NTMFS4H013NFT1G is a rugged device which is suitable for operation in high ambient temperatures and has a wide range of operating environment characteristics such as high voltage protection and high temperature tolerance. It is also highly efficient, making it a good option for applications which need to conserve energy.

The NTMFS4H013NFT1G is a highly effective MOSFET transistor with a wide range of applications in both industrial, medical and automotive arenas. The low on-resistance, high-cell density and the wide operating environment characteristics make it an ideal choice for power switching applications, amplifier and driver circuits, industrial, medical and automotive applications.

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