Allicdata Part #: | NTMFS4H01NFT1G-ND |
Manufacturer Part#: |
NTMFS4H01NFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 54A SO8FL |
More Detail: | N-Channel 25V 54A (Ta), 334A (Tc) 3.2W (Ta), 125W ... |
DataSheet: | NTMFS4H01NFT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Ta), 334A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.7 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5538pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 3.2W (Ta), 125W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NTMFS4H01NFT1G is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated circuit from ON Semiconductor. The device is designed to have low gate charge, low gate resistance, low voltage operation and reliable current limiting protection.
The NTMFS4H01NFT1G is mainly used as a switch for high power applications such as power supplies, motor control and load switching, and as a linear regulator for battery protection, load line tracking and load matching. It is also used in audio and video circuits where current limiting protection is needed.
The NTMFS4H01NFT1G consists of an N-channel metal-oxide-semiconductor field effect transistor (MOSFET) and a current limiter circuit (CLL). The MOSFET operates by passing current through a gate voltage input and is commonly used as a switch because it can be switched on or off by applying appropriate voltages to the gate. The current limit circuit is included in the design to protect the device from overcurrent and short circuits. It will limit the output current to a safe value when an overcurrent or short-circuit condition is detected.
The operation of the NTMFS4H01NFT1G is based on the operation of the MOSFET device. When a voltage is applied to the gate of the MOSFET, this will create an electric field which will form an inversion layer (a layer between the metal gate and the semiconductor substrate). This layer will act as a resistor and will alter the conductivity of the device, leading to increased current flowing through the drain/source terminals. The current through the device can be controlled by modifying the voltage applied to the gate.
The current limit circuit incorporated into the NTMFS4H01NFT1G is designed to protect the device from overcurrent and short circuit conditions. When an overcurrent condition is detected, the current limit circuit will limit the output current to prevent damage to the device. The current limit circuit is adjustable and can be used to set the maximum output current, and should not be set higher than the rating of the device.
In summary, the NTMFS4H01NFT1G is a single N-channel MOSFET integrated circuit from ON Semiconductor. It is mainly used as a switch in high power applications, and as a linear regulator for battery protection, load line tracking, and load matching. It also includes a current limit circuit for protection from overcurrent and short circuit conditions. The device operates based on the principles of the MOSFET, in which the current through the device is controlled by the applied gate voltage.
The specific data is subject to PDF, and the above content is for reference
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