NTMFS4H02NFT1G

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The NTMFS4H02NFT1G is a 4A, 80V N-channel enhancement mode MOSFET with an integrated Faraday Shield. This device is one of the few MOSFETs that can handle such a high voltage. The integrated Faraday shield also adds another layer of robustness to the device, making it ideal for applications such as motor control, robotics, and general industrial use. In this article we will discuss the application field and working principle of the NTMFS4H02NFT1G.

Application Fields

The NTMFS4H02NFT1G is designed for use in a wide variety of applications, making it ideal for industrial use. Its maximum drain-source voltage of 80V allows it to be used in a variety of high-voltage applications, such as motor control and robotics. The integrated Faraday shield also makes it perfect for applications such as high-gain amplifiers and low-noise circuits, where noise immunity is essential. Additionally, the NTMFS4H02NFT1G is well-suited for high-efficiency applications, thanks to its low RDS(on), which makes it ideal for switching applications requiring high currents.

Working Principle

The NTMFS4H02NFT1G is a N-channel MOSFET, meaning it is focused on controlling current through the drain. A MOSFET is a three-terminal device, so the three major parts are the gate, the source, and the drain. When a voltage is applied to the gate of the MOSFET relative to the source, a channel forms between the source and drain that allows current to flow. This is known as the “channel formation region” and is process-dependent. The channel formation region depends on the work function difference between the gate and the source. When the gate voltage is increased further, the channel will start to pinch off, and current can no longer flow regardless of how much drain-source voltage is applied. This is known as the “pinch off region” and is process-dependent as well. In the pinch-off region, the channel will also form a depletion region, which is responsible for blocking any further current flow.

The NTMFS4H02NFT1G also utilizes an integrated Faraday shield, which is a thin layer of metal placed around the transistor area, and the way this works is by shielding the area from external electromagnetic interference. This makes the NTMFS4H02NFT1G an ideal choice for applications where noise immunity is essential. The Faraday shield works by absorbing the energy from the external electromagnetic field and dissipating it as heat.

Conclusion

As we can see, the NTMFS4H02NFT1G is a powerful, high-voltage, N-channel MOSFET with integrated Faraday shielding, making it ideal for many applications, such as motor control and robotics. It is also well-suited for high-gain amplifiers and low-noise circuits, thanks to its excellent noise immunity. The integrated Faraday shield and low RDS(on) also make it perfect for high-efficiency switching applications. With its wide application field and impressive capabilities, it is easy to see why the NTMFS4H02NFT1G has become a popular choice for high-voltage applications.

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