NTMFS4945NT3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTMFS4945NT3G is a versatile single-channel MOSFET with features designed for use in many applications involving switching, synchronous rectification, level shifting, and power management. In particular, it is well suited for applications such as synchronous rectification, buck and boost converters, and automotive power rails.

This MOSFET has the aid of an integrated body diode to reduce switching losses. Additionally, it incorporates a high-speed edge-rate processor to minimize trr and reduce power dissipation. Furthermore, its low on-resistance facilitates lower conduction losses.

The MOSFET also has protection features to handle harsh conditions safely. These include thermal shutdown and current limit. In addition, the device has an integrated electrostatic discharge (ESD) protection diode, allowing it to operate at higher voltage levels without damage.

The NTMFS4945NT3G device includes a unique platform that allows the user to choose between a through-hole or surface-mount package. Its industrial temperature range mode offers enhanced reliability for temperature-sensitive applications. This MOSFET also provides excellent ruggedness and low gate-drive current. It can handle high current applications with minimal power loss.

The NTMFS4945NT3G is designed to be used in conjunction with other semiconductor devices to create sophisticated power management solutions. Its gate-to-source voltage (Vgs) is protected against voltage spikes with a slew rate limited gate driver circuit. The gate driver circuit also enables high switching speeds and lower input capacitance.

The NTMFS4945NT3G MOSFET is a power device that can be used in applications involving both high and low-side switch control. Its operating temperature range is -40°C to +125°C, and its Vgs range is 0V to +8V maximum. It has an on-state resistance of 10mΩ and a maximum current handling of 14A continuous.

The working principle of a MOSFET is similar to that of a BJT; the MOSFET has two terminal connections which are the drain and the source. Connected to these terminals are the gate and the body. The gate is cleverly designed to control the current flow from the source to the drain when voltage is applied to the gate terminal.

The working principle of the NTMFS4945NT3G is that the gate terminal controls a field effect in the MOSFET’s channel by controlling the voltage on its internal gate electrode. When the gate voltage is high enough, the MOSFET is turned on and current flows from the source to the drain. The MOSFET’s intrinsic body diode will be reverse biased when the MOSFET is off and the reverse current will be limited due to the low on-resistance.

The NTMFS4945NT3G power MOSFET can be used in a wide range of applications including switching, synchronous rectification, level shifting, and power management. This MOSFET is well suited for synchronous rectification, buck and boost converters, as well as automotive power rails. It has a wide operating temperature range, low on-resistance, and high current handling capability, all of which make it suitable for such applications.

The specific data is subject to PDF, and the above content is for reference