NTMFS4898NFT1G Discrete Semiconductor Products

The NTMFS4898NFT1G is a dual N-Channel Enhancement Mode Field Effect Transistor (FET). It is specifically designed for use in handheld devices and home PCs for power management applications such as battery protection, efficiency converters, DC/DC step-down and step-up converters, general switching and signal conditioning. The NTMFS4898NFT1G is primarily designed to reduce power consumption and improve the system’s overall reliability. It has a low on-state resistance (RDS(on)) of only 0.068 ohm, making it ideal for applications that require maximum efficiency in a smaller package.

The NTMFS4898NFT1G is composed of a substrate, two N-type source/drain terminal regions, and two gate contact. It is a high-performance device with superior dynamic performance, very low gate charge (Qg) and a high current capacity in both enhancement and linear modes. This makes it suitable for high-end applications, such as laptop and notebook power management systems, cellular phones, and high-power DC/DC converters.

The NTMFS4898NFT1G operates in enhancement mode, which means the addition of gate bias voltage results in an increase in the drain-to-source current. It has a high breakdown voltage of 20 V, making it suitable for higher voltage applications. It also has an efficient low-side switch, which helps reduce power dissipation.

The working principle of the NTMFS4898NFT1G is based on the transfer of electrical charge between the source and drain terminals. When a voltage is applied to the gate terminal, the channel between source and drain opens, allowing charge carriers to pass through. The channel resistance is controlled by the gate-to-source voltage, and the magnitude of the drain current is proportional to the magnitude of the gate voltage.

The NTMFS4898NFT1G has a wide range of applications due to its excellent characteristics, such as low RDS(on), high tolerance for high voltage and current loads, and a low on-state capacitance. It is suitable for battery management systems, audio amplification, power converters, and power MOSFET gates. It can also be used in circuit protection, instrumentation, and automotive applications.

In summary, the NTMFS4898NFT1G is a high-performance single N-channel enhancement mode FET with superior dynamic performance, very low gate charge, and a high current capacity in both enhancement and linear modes. Its many applications make this device ideal for use in a variety of applications, particularly power management systems in handheld devices and home PCs.