NTMFS4837NT1G Allicdata Electronics

NTMFS4837NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4837NT1GOSTR-ND

Manufacturer Part#:

NTMFS4837NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 10A SO-8FL
More Detail: N-Channel 30V 10A (Ta), 74A (Tc) 880mW (Ta), 47.2W...
DataSheet: NTMFS4837NT1G datasheetNTMFS4837NT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2048pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4837NT1G is a single N-channel enhancement mode power field effect transistor (FET). It is a part of the STMicroelectronics portfolio of FETs, which provide designers with a variety of FETs for their applications. This device offers high-speed switching, low on-resistance, and are easily integrated into a wide range of applications. The device is optimized for low gate charge to reduce switching losses and increase efficiency. It is designed to operate from a 12V supply and has an on-state resistance of 45mΩ at a drain-source voltage (VDS) of 10V. The current-carrying capacity is rated at 4.8A, with a maximum drain current (ID) of 7A.

The NTMFS4837NT1G is especially suited for use as a switching device in automotive and telecommunication systems. It can also be used in power circuit designs, such as in AC/DC converters and DC/DC step-down converters. It can be used to control power switching in a wide range of lower power applications, such as consumer electronics, computers, and lighting. Additionally, it can be used as an amplifier stage in audio applications.

The NTMFS4837NT1G is an enhancement-mode FET. This means that it uses voltage to control the current that passes through it. The device is normally off, which means it can be switched on with a small amount of gate voltage. The gate voltage is compared to the source voltage and the resulting electric field creates an inversion channel in the gate. This allows the channel to become conducting, allowing current to pass through the FET. The gate voltage then controls the resistance of the FET, which in turn controls the current that passes through it.

The device has an avalanche rating of 175V, which means it can tolerate high energy pulses. This means it can withstand hight energy pulses and can be used with confidence in applications where surges of current may occur. The NTMFS4837NT1G also has a fast switching speed, which allows for quick current switching and high switching frequencies. The device has a maximum operating temperature of 150°C, which means it can operate in high temperature environments without impacting performance.

The NTMFS4837NT1G is a low-cost, high-performance power FET. It has a low on-resistance and is designed for high-speed switching applications. It is designed to operate from a 12V supply and can be used in a wide range of applications. It is especially suited for use as a switching device in automotive and telecommunication systems, and can also be used in power circuit designs, such as in AC/DC converters and DC/DC step-down converters. The device has an avalanche rating of 175V and a fast switching speed, making it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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