NTMFS6B14NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS6B14NT1GOSTR-ND |
Manufacturer Part#: |
NTMFS6B14NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 10A SO8FL |
More Detail: | N-Channel 100V 10A (Ta), 50A (Tc) 3.1W (Ta), 77W (... |
DataSheet: | NTMFS6B14NT1G Datasheet/PDF |
Quantity: | 1500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS6B14NT1G is a power MOSFET transistor with a single-channel surface-mount package commonly used in a variety of automotive and industrial applications. This power MOSFET transistor combines high levels of performance, reliability, and efficiency with a small, low profile footprint. This transistor operates using a majority-carrier principle, meaning the current flow between the source and drain is primarily carried by majority carriers (positive charge carriers) while minority carriers (negative charge carriers) are not taken into account. This power MOSFET transistor features an advanced process technology, optimized gate charge, fast switching, low on-resistance, and low gate threshold voltage characteristics; making it ideal for use in high frequency switching applications and power management.
The NTMFS6B14NT1G is designed for use in boost converters, DC-DC converters, load switches, and low-EMI applications. The low gate threshold voltage and fast switching speed of this transistor greatly reduce the losses associated with switching applications, thereby increasing the efficiency and reliability of the system. This power MOSFET transistor also offers a low on-resistance, meaning it can regulate current flow more accurately than traditional MOSFET transistors. This feature is especially important for low power applications because it allows the transistor to operate at a reduced operating voltage.
The NTMFS6B14NT1G also provides outstanding thermal performance and low-noise performance. This is achieved by its advanced process technology as well as its small footprint. This transistor has an improved peak current capability, which means it is capable of handling higher currents at higher temperatures than conventional MOSFET transistors. Additionally, its low output capacitance allows for better noise performance. This allows for better noise immunity in switching applications.
The NTMFS6B14NT1G is ideal for high voltage applications such as automotive and industrial applications. Its high voltage rating (200 V) and its strong high temperature performance make it well suited for use in high power environments. Additionally, its small size and low profile footprint make it well suited for applications where space is limited. This transistor is also compatible with both switching and linear voltage regulators, allowing it to be easily integrated into a variety of applications.
In conclusion, the NTMFS6B14NT1G transistor is an ideal choice for a variety of automotive and industrial applications. Its majority-carrier based operation, low gate threshold voltage, low on-resistance, and fast switching speed make it well suited for high frequency switching applications and power management. Its improved peak current capability, low output capacitance, and low-noise performance make it well suited for low power applications. Its high voltage rating and strong thermal performance also make it well suited for high voltage applications. The small size and low profile footprint of this transistor make it ideal for applications in which space is limited, and its compatibility with both switching and linear voltage regulators makes it easy to integrate into existing designs.
The specific data is subject to PDF, and the above content is for reference
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