NTMFS5C430NT1G Discrete Semiconductor Products

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The NTMFS5C430NT1G is a single, logic-level gate Field Effect Transistor (FET). This type of FET device, generally referred to as MOSFET or Metal Oxide Semiconductor FET, is designed for use in power applications. Its wide range of features make it a versatile device for use in a variety of applications.

The NTMFS5C430NT1G is an enhancement-mode, P-channel type MOSFET with an integrated gate-source voltage drive. This FET has a drain-source on-state resistance (RDS(on)) of 430 mΩ, which makes it well suited for use as a power switch in DC/DC converters, SMPS, LCD backlight modules and frequencies inverters. It also features low gate-leakage current of only 900 nA (VGS = ±20V) and an on-resistance tolerance of ±10%.

The NTMFS5C430NT1G is an ideal choice for power circuits which require fast switching speeds and a low on-resistance. It also has a relatively low power dissipation due to its low RDS(on) resistance. The device is also optimized for low gate charge, which makes it suitable for high-speed switching applications.

The NTMFS5C430NT1G is fabricated with a high-voltage silicon-on-insulator dopant (SOID) process. This process provides superior performance in terms of surge-current withstand capability and fast switching times. The device is available in a PQFN package with a variety of thermal performance options.

The NTMFS5C430NT1G is a versatile device which can be used in a variety of high-performance applications. It is well suited for use in DC/DC converters, switch-mode power supplies, computer peripherals, industrial motor drives, HVAC and Smart Metering applications, automotive electronics and medical equipment. The device is also suitable for use in portable electronic devices, such as cell phones and tablets, and in consumer and industrial audio/video systems.

In summary, the NTMFS5C430NT1G is an ideal choice for use in a wide range of applications where a low on-resistance, fast switching speeds and low power dissipation are required. Its superior performance and low gate charge make it an excellent choice for high-speed switching applications.

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