Allicdata Part #: | NTMFS4985NFT1GOSTR-ND |
Manufacturer Part#: |
NTMFS4985NFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 65A SO8FL |
More Detail: | N-Channel 30V 17.5A (Ta), 65A (Tc) 1.63W (Ta), 22.... |
DataSheet: | NTMFS4985NFT1G Datasheet/PDF |
Quantity: | 1500 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.63W (Ta), 22.73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.5A (Ta), 65A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTMFS4985NFT1G Application Field and Working Principle
The NTMFS4985NFT1G is a high-voltage N-channel enhancement-mode field-effect transistor (FET). First introduced by STMicroelectronics, this device is suitable for compatibility with high-frequency switching devices. It has applications in electronic motor control, such as driving motors, solenoids, and brake-actuating switches. It’s a lead-free, halogen-free, and RoHS-compliant device.
In a FET, voltage is used to control the current flow between the source and drain terminals, which makes it an ideal choice for applications that require low-power switching. The NTMFS4985NFT1G has an exceptionally low on-state resistance, allowing it to switch high voltages quickly and effectively. The device is also highly efficient, making it an excellent choice for applications that require low-noise operation.
The NTMFS4985NFT1G is a single MOSFET, meaning it has a single source, drain and gate terminal. The source and drain terminals are usually connected to the power supply, while the gate is connected to a control voltage. When the control voltage is applied to the gate, an electric field is created, which causes electrons to be attracted to the gate and pulled away from the source and drain regions. This creates an inversion layer in the source and drain regions, allowing current to flow from the source to the drain. The magnitude of the current flow is controlled by the gate voltage.
The NTMFS4985NFT1G is a rugged and reliable device, offering excellent performance and long term reliability. It is suitable for applications in automotive, industrial and consumer electronics. It’s Mil-qualified and has a temperature rating of -55°C to +125°C. The device is also ESD-protection and short-circuit protection compliant.
In summary, the NTMFS4985NFT1G is a versatile and high-performing single MOSFET. It is suitable for applications that require low-power switching and high frequency switching. Its rugged and reliable design makes it an excellent choice for automotive, industrial and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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