NTMFS5C450NT1G

Vgs(th) (Max) @ Id:	3.5V @ 65µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.6W (Ta), 68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Ta), 102A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction
The NTMFS5C450NT1G is a single polarity enhancement mode MOSFET that is widely used in various applications. It has a low RDS(on) which makes it suitable for low power applications. It also has low gate lag and fast switching times which makes it suitable for high speed applications. It is also compliant with RoHS and UL94V-0 standards.

Application fields
The NTMFS5C450NT1G is a single polarity enhancement mode MOSFET. This makes it suitable for a variety of applications such as high speed switching and low power consumption. It is also suitable for use in applications that require low leakage current and high ESD protection. It is suitable for use in digital logic circuits, power supplies, industrial machinery, motor control, and many other applications.

Working principle
The NTMFS5C450NT1G is a single polarity enhancement mode MOSFET. It operates on the principle of gate-drain-source voltage. When the gate-to-source voltage is positive, a channel forms between the gate and the source terminals. This channel is made up of an inversion layer of electrons. These electrons then flow from the source to the drain terminal, making the device “ON”. When the gate-to-source voltage is negative, the channel is blocked and it is “OFF”. This makes it suitable for applications that require controlled switching and control of the current flow. The NTMFS5C450NT1G has a low RDS(on), which means that less power is required to switch the device. This makes it suitable for low power applications where high speed switching is required. It also has a low gate lag and fast switching times which make it suitable for high speed applications. The device is compliant with RoHS and UL94V-0 standards.

Advantages
The NTMFS5C450NT1G has several advantages over other similar devices. The most notable advantage is its low RDS(on). This makes it suitable for use in low power applications and it also helps to improve the efficiency of the device. It also has low gate lag and fast switching times which makes it suitable for applications that require high speed switching. Additionally, the device is RoHS and UL94V-0 compliant which means that it is safe to use in a variety of industrial and consumer applications.

Conclusion
The NTMFS5C450NT1G is a single polarity enhancement mode MOSFET that can be used in a variety of applications. It has a low RDS(on) which makes it suitable for use in low power applications and it also has low gate lag and fast switching times which makes it suitable for high speed applications. Additionally, the device is compliant with RoHS and UL94V-0 standards which makes it safe to use in a variety of industrial and consumer applications.

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