NTMFS5C410NT3G

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The NTMFS5C410NT3G is a silicon N-channel enhancement mode power field effect transistor (FET). This style of field effect transistor (FET) is a single type transistor which utilizes a substrate channel to control the flow current. It is a type of Power Management Field Effect Transistor with a relatively sheltered on-resistance. Its compact design, minimal size, and higher ratings enable the NTMFS5C410NT3G to be used for both low and high power applications.

Features of the NTMFS5C410NT3G

The NTMFS5C410NT3G is designed for optimal performance in high power applications. It is rated at a maximum drain current of 42A and drain-source voltage of 50V with a Tj max rating of 175°C. The on-resistance of the NTMFS5C410NT3G is very low compared to single time-constant transistors. It also has a thermal resistance of 8.2°C/W which helps in dissipating the heat quickly and allows the transistor to remain cooler during usage. Additionally, it has an excellent body diode recovery time and can handle pulsed load current of up to 6A. As a single transistor, it is also easy to use and can replace the more cumbersome multi-transistor equivalent.

Applications

The NTMFS5C410NT3G is a general purpose power MOSFET transistor which can be used for multiple applications that require low on-resistance switching of both low and high loads. Its enhanced design and lower resistance ratings makes it ideal for applications such as motor control, power conversion, power supply switching, and high current switching. In addition, it can be used for solar panels and other renewable energy applications. It is also popularly used in automotive sub-systems for controlling electric motors, fuel injection, and braking systems.

Working Principle

The NTMFS5C410NT3G is an N-channel enhancement mode power FET. This style of FET uses a substrate channel to control the flow of current. It has four pins, drain, gate, source, and body. The drain and source pins are connected to the power supply while the gate pin is connected to a voltage source that can be used to control the flow of current through the channel. When a voltage is applied to the gate of the FET, the channel opens up, allowing current to flow from the drain to the source. When the voltage is removed, the FET returns to its non-conducting state, blocking the flow of current.

Conclusion

The NTMFS5C410NT3G is an efficient single transistor power MOSFET designed for optimal performance in high power applications. It is rated with a maximum drain current of 42A, drain-source voltage of 50V, and thermal resistance of 8.2°C/W. It is utilized in a variety of motor control, power conversion, and power supply switching applications as well as renewable energy applications. Additionally, it is used in automotive systems for controlling electric motors, fuel injection, and braking systems. The NTMFS5C410NT3G operates by opening and closing a substrate channel with an applied gate voltage which allows current to flow from the drain to the source pins.

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