Allicdata Part #: | NTMFS5C609NLT1G-ND |
Manufacturer Part#: |
NTMFS5C609NLT1G |
Price: | $ 1.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V SO8FL |
More Detail: | |
DataSheet: | NTMFS5C609NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.01430 |
Series: | * |
Part Status: | Active |
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The NTMFS5C609NLT1G is an advanced, high-performance semiconductor device. It is part of the Single MOSFETs family, better known as Field Effect Transistors (FETs). The device is designed and manufactured to be used in a wide range of applications, from industrial to consumer electronics.
FETs are the most common type of transistor in modern electronics. They are used for a wide range of applications, from amplification and switching to power control. FETs can be used as amplifying devices, to increase the output signal of an analog circuit. In contrast, FETs can also be used in switching and power control applications, where they can provide quick turn-on and turn-off times.
The NTMFS5C609NLT1G is an advanced MOSFET device that was developed specifically for high-performance applications. The device is designed using the latest technology and contains an advanced gate drive circuitry, which can provide the device with high switching speeds and low on-state resistance. Moreover, the device has excellent thermal characteristics, allowing it to operate reliably at high temperatures.
The NTMFS5C609NLT1G is widely used in a variety of applications, ranging from industrial applications to consumer electronics. In industrial applications, the device is used for power conversion, motor control, and power switches. In consumer electronics, the device is often used for DC-to-DC converters, synchronous rectifiers, and other power supply applications. Additionally, the device can be used in audio amplifiers and automotive applications.
The NTMFS5C609NLT1G\'s working principle is based on the MOSFET channel. The device contains a gate, a source, and a drain. When a voltage is applied to the gate, a channel opens between the source and the drain. This channel is used to control the voltage and current flow between the source and the drain. Depending on the voltage applied to the gate, the source-drain current can be controlled and switched on and off.
The NTMFS5C609NLT1G is a well-engineered, high-performance device. Its advanced gate drive circuitry provides quick turn-on and turn-off times and low on-state resistance. The device also has excellent thermal characteristics, allowing it to operate reliably at high temperatures. Thanks to its wide range of uses and its strong performance, the NTMFS5C609NLT1G is one of the most popular MOSFETs on the market today.
The specific data is subject to PDF, and the above content is for reference
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