
Allicdata Part #: | NTMFS5C612NLT1G-ND |
Manufacturer Part#: |
NTMFS5C612NLT1G |
Price: | $ 3.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 36A SO8FL |
More Detail: | N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 3.25000 |
10 +: | $ 2.81667 |
100 +: | $ 2.27500 |
1000 +: | $ 2.16667 |
10000 +: | $ 2.05833 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6660pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 235A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTMFS5C612NLT1G is a single N-Channel MOSFET transistor. It is a vertical double-diffused MOSFET transistor of high cell density that has been designed to reduce on-state resistance. It can handle high drain current (ID) and has a low gate-source threshold voltage (VGS(th)). It is used in a variety of applications, and has some specific features that help distinguish it from other transistors.The primary application of the NTMFS5C612NLT1G is switching applications. This could include switching power supplies, dc-dc converters, solenoids, and motor drivers. This type of transistor is used to amplify, switch, and regulate an electrical signal in a circuit. It can be used to switch audio and video signals, regulate voltage, and control current.The NTMFS5C612NLT1G has an operating temperature range of -55°C to 150°C and a maximum drain-source breakdown voltage (VDSS) of 45V. It is able to provide a maximum drain current rating of 1.5A and a maximum drain-source on-state resistance of 0.065 Ω. The gate-source threshold voltage is between 2.5 and 4V and the gate-source capacitance is between 7 and 17 pF.The working principle of the NTMFS5C612NLT1G is the same as other MOSFET transistors. It has an insulated gate that is connected to a voltage source and is capable of modulating the flow of current between the source and drain. When the gate voltage is low, no current is allowed to flow. As the voltage increases, the current between the source and drain increases, and the transistor is said to be in the “on” state. When the gate voltage is high, the transistor is said to be in the “off” state, and no current can flow through the device.
The NTMFS5C612NLT1G is a great choice for applications where a low on-state resistance, high drain current rating, and high temperature operating range are required. It is also a cost-effective MOSFET transistor, and its small size makes it an ideal choice for applications where space is at a premium. This transistor is widely used in a variety of applications, and its performance and reliability make it an attractive option for many circuit designs.
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