NTMFS5C612NLT1G Allicdata Electronics
Allicdata Part #:

NTMFS5C612NLT1G-ND

Manufacturer Part#:

NTMFS5C612NLT1G

Price: $ 2.60
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 36A SO8FL
More Detail: N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W ...
DataSheet: NTMFS5C612NLT1G datasheetNTMFS5C612NLT1G Datasheet/PDF
Quantity: 1000
1 +: $ 2.60000
10 +: $ 2.52200
100 +: $ 2.47000
1000 +: $ 2.41800
10000 +: $ 2.34000
Stock 1000Can Ship Immediately
$ 2.6
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTMFS5C612NLT1G is a single N-Channel MOSFET transistor. It is a vertical double-diffused MOSFET transistor of high cell density that has been designed to reduce on-state resistance. It can handle high drain current (ID) and has a low gate-source threshold voltage (VGS(th)). It is used in a variety of applications, and has some specific features that help distinguish it from other transistors.The primary application of the NTMFS5C612NLT1G is switching applications. This could include switching power supplies, dc-dc converters, solenoids, and motor drivers. This type of transistor is used to amplify, switch, and regulate an electrical signal in a circuit. It can be used to switch audio and video signals, regulate voltage, and control current.The NTMFS5C612NLT1G has an operating temperature range of -55°C to 150°C and a maximum drain-source breakdown voltage (VDSS) of 45V. It is able to provide a maximum drain current rating of 1.5A and a maximum drain-source on-state resistance of 0.065 Ω. The gate-source threshold voltage is between 2.5 and 4V and the gate-source capacitance is between 7 and 17 pF.The working principle of the NTMFS5C612NLT1G is the same as other MOSFET transistors. It has an insulated gate that is connected to a voltage source and is capable of modulating the flow of current between the source and drain. When the gate voltage is low, no current is allowed to flow. As the voltage increases, the current between the source and drain increases, and the transistor is said to be in the “on” state. When the gate voltage is high, the transistor is said to be in the “off” state, and no current can flow through the device.

The NTMFS5C612NLT1G is a great choice for applications where a low on-state resistance, high drain current rating, and high temperature operating range are required. It is also a cost-effective MOSFET transistor, and its small size makes it an ideal choice for applications where space is at a premium. This transistor is widely used in a variety of applications, and its performance and reliability make it an attractive option for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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