NTMFS5C612NLT3G Allicdata Electronics
Allicdata Part #:

NTMFS5C612NLT3G-ND

Manufacturer Part#:

NTMFS5C612NLT3G

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 36A SO8FL
More Detail: N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W ...
DataSheet: NTMFS5C612NLT3G datasheetNTMFS5C612NLT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.93107
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS5C612NLT3G is a power MOSFET transistor used in different applications with different requirements. This transistor has a low on-state resistance and can handle high input voltages. It is also able to handle high frequencies, making it suitable for applications such as audio amplifiers, DC-DC converters, switch mode power supplies, and pulse motor control.

Power MOSFET transistors, also known as metal oxide field effect transistors, are transistors that are designed to efficiently switch power. Unlike BJT transistors, power MOSFET transistors are voltage controlled, meaning that voltage can be used to control the amount of current flowing through it. This makes them ideal for applications that require high frequency switching or high current handling.

The NTMFS5C612NLT3G utilizes a highly advanced trench MOSFET technology which provides superior performance. It has a very low input capacitance, meaning that higher switching speeds and greater efficiency can be achieved with smaller components. It also has a low drain to source on-state resistance, which allows higher power delivery.

In addition to its low RDSOn, this transistor also has other features to make operating it a breeze. It has a built-in sensor to protect it from over temperature, and it also includes Schottky diodes to minimize switching losses. Furthermore, the NTMFS5C612NLT3G has ESD protection to make it more resilient to transients.

The NTMFS5C612NLT3G can be used for a variety of different applications, including power switching, audio amplifiers, DC-DC converters, and motor control systems. Its low RDSOn and low input capacitance make it especially suitable for switching power supplies and DC-DC converters. It can also be used in audio amplifiers, as it can handle high frequencies with less distortion.

The operating principle of the NTMFS5C612NLT3G is the same as any MOSFET transistor. When a voltage is applied to the gate terminal, a voltage gradient is created across the channel, allowing current to flow through it. This voltage can be used to vary the current that is flowing through the transistor and thus control the power that is delivered.

Overall, the NTMFS5C612NLT3G is a very versatile power MOSFET transistor. Its low input capacitance and low on-state resistance make it ideal for a variety of applications, ranging from audio amplifiers and DC-DC converters to switch mode power supplies and motor control systems. Furthermore, its built-in features, such as its over temperature monitoring, ESD protection, and Schottky diodes, ensure that it can be used reliably in any application.

The specific data is subject to PDF, and the above content is for reference

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