NTMFS6B03NT3G

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The NTMFS6B03NT3G Mosfet is an enhancement mode power MOSFET that provides the most suitable choice for the design of power management systems. It is a relatively new device providing a range of ultra-low-on-resistance characteristics and a variety of performance improvements over traditional MOSFETs.

The NTMFS6B03NT3G is based on an advanced Floating-Channel enhancement type MOSFET technology. It is optimized for extremely low-on-resistance performance at a given gate voltage. It also provides high performance, cost-effective and reliable solutions for a wide range of power management applications including DC and AC power switching, Motor control and DC-DC conversion.

The NTMFS6B03NT3G technology provides the following major advantages:

• Minimum gate-source voltage (Vgs) to drive maximum current is low, resulting in very low parasitic gate losses.
• Very fast switching speeds and very low switching losses.
• Excellent thermal stability to support reliable performance over temperature.
• Flexible drain current and gate voltage combinations.
• Advanced fully-depletion structure with sub-micron gate-oxide process.

The NTMFS6B03NT3G is specifically designed for high-performance power switching applications. It is offered in several configurations with different on-resistance (Rds) and maximum drain current (Id) ratings. It is designed for use in low-voltage (typically 12V to 48V) power electronics applications, such as DC-DC converters, motor controllers and switching power supplies. The NTMFS6B03NT3G can also be used in other power control applications such as battery management, lighting and industrial applications where circuit efficiency must be maximized.

Power MOSFETs typically have a relatively simple operating principle. They work by conductive current passing between drain (D) and source (S) terminals when the gate (G) terminal is positively biased with respect to the source terminal. This biasing is a voltage applied to the gate that is level-shifted relative to the source. Increasing the applied gate voltage further increases the current passing between the source and drain terminals. The current flow can be controlled by varying the applied gate voltage, allowing a MOSFET to function as a powerful, but economical, switch.

The NTMFS6B03NT3G offers a practical advantage over traditional MOSFETs by providing enhanced performance with the lowest possible gate charge. It is a reliable switching device with a maximum drain–source on-resistance of only 8 milliohms, and has a very low power dissipation with an extended drain-source breakdown voltage of 21V. This makes this device an ideal choice for power control applications that require high efficiency and power density.

The NTMFS6B03NT3G is an ideal choice for applications that require high switching performance, minimal switching losses and thermal stability. It features very good performance in DC and AC applications, with a low gate-drive demand, low on-resistance and high switching-speed. In short, the NTMFS6B03NT3G enables a much more efficient, cost effective and reliable power conversion solution compared to traditional MOSFETs.

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