NTR4003NT1G Discrete Semiconductor Products

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 NTR4003NT1G is a low on-state resistance (Rdson) N-channel enhancement All-Aluminum CMOS process power MOSFET which combines the speed, stiffness and oxidation resistance of a traditional silicon MOSFET with an Ohmic resistance lower than a usual silicon MOS, while maintaining a low gate charge (< 30 nC) suitable for fast power designs. This fast acting and low gate charge MOSFET enables greater efficiency and reliability.  
 
NTR4003NT1G is mainly applied in power switching, lighting ballast, smart lighting, consumer product, automotive and industrial applications like induction motor control, fan motor control and low voltage drives, etc. Combining superior thermal conductivity and faster switching speed, this MOSFET is optimized for consumer and industrial power solutions. 
NTR4003NT1G works in a unique combination of current, voltage and temperature. The power MOSFET generally consists of two output terminals known as source and drain and a control terminal known as the gate. When the voltage is applied to the gate, it creates an electric field, which in turn polarizes the MOSFET. This process is called ‘Gate Turn-on’ and the MOSFET is said to be ‘On’. In this ‘On’ state, the MOSFET is capable of carrying a large amount of current. When the voltage across the gate is removed or reduced to zero, the polarity of the electric field is reversed and the MOSFET is said to be in ‘Off’ state. 
The NTC4003NT1G power MOSFET is designed with a small internal diode connected in reverse parallel direction to its source and drain, this diode is known as the ‘body diode’. The body diode is formed forcibly when the device is in Off-state and it acts as a self-protective feature for the power MOSFET. 
The NTC4003NT1G offers a very high drain source breakdown voltage (BVds) above 500V, a low typical gate charge (Qg) of less than 30nC and a maximum operating temperature of up to 175 degree Celsius. Its high power density improving the heat dissipation makes NTC4003NT1G an ideal solution for high current power designs, offering power system suppliers a great advantage to succeed their efficiency and electric power needs.
In conclusion, the NTC4003NT1G is a power MOSFET with a low on-state resistance, low gate charge and high operating temperature, suitable for a wide range of industrial and consumer products. Its fast switching capability offers efficient power solutions for higher duty cycles, lower power dissipation and improved system performance. 

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