Allicdata Part #: | NTR4171PT3G-ND |
Manufacturer Part#: |
NTR4171PT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 2.2A SOT23-3 |
More Detail: | P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount S... |
DataSheet: | NTR4171PT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 480mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTR4171PT3G is a single enhancement mode field-effect transistor (FET) which operates as a switch in a wide range of applications. It is commonly used in high frequency switching applications because its maximum frequency of operation is 40 MHz. As an enhancement mode device, the gate of the NTR4171PT3G must be at a voltage above a certain threshold in order for it to be in the conducting state. In addition, it has a low drain-source on-resistance, making it ideal for low power applications.
The NTR4171PT3G is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is an enhancement mode device, which means that the channel between the drain and the source is pinched off when the gate voltage is below a certain threshold, and the channel opens up when the gate voltage is above that threshold. The gate voltage is determined by the applied voltage between the gate and the source.
The basic operation of an NTR4171PT3G is quite simple. When the voltage between the gate and the source is above the threshold voltage (Vgs(th)), the device conducts, and current can flow from the drain to the source (IDS(on)). When the gate voltage is below Vgs(th), the device does not conduct, and no current will flow.
The NTR4171PT3G is commonly used for high frequency switching. It is designed for applications where low on-resistance and high switching speed are required. Additionally, it has a low gate capacitance, making it ideal for applications where fast switching speeds are needed.
The NTR4171PT3G is also commonly used in low power applications. It has a low drain-source on-resistance, meaning that it can be used for applications where low power dissipation is essential. The device also has a low gate-source leakage current, making it suitable for applications where battery power is limited.
In addition to its use in high frequency and low power applications, the NTR4171PT3G is also used in amplifier applications. It can be used as an input stage amplifier in low voltage audio applications, where its low input bias current is ideal.
The NTR4171PT3G is also used in logic switching applications. It can be used as a switch to control logic signals in both digital and analog circuits. Its wide range of operational frequencies, low on-resistance, and low gate capacitance make it well suited for logic switching applications.
The NTR4171PT3G is a versatile device with a wide range of applications. It is commonly used in high frequency switching, low power applications, amplifier applications, and logic switching applications. Its low on-resistance, high switching speed, and low gate capacitance make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NTR4503NST1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.5A SOT2... |
NTR4501NST1G | ON Semicondu... | 0.1 $ | 1000 | MOSFET N-CH 20V 3.2A SOT2... |
NTR4501NT1 | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 3.2A SOT-... |
NTR4170NT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.2A SGL ... |
NTR4171PT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.2A SOT2... |
NTR4501NT3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 3.2A SOT-... |
NTR4501NT3G | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 3.2A SOT-... |
NTR4502PT1 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 1.13A SOT... |
NTR4502PT3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 1.13A SOT... |
NTR4502PT3G | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 1.13A SOT... |
NTR4503NT1 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.5A SOT-... |
NTR4503NT3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.5A SOT-... |
NTR4503NT3G | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 1.5A SOT-... |
NTR4101PT1G | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 1.8A SOT-... |
NTR4171PT1G | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 2.2A SOT2... |
NTR4501NT1G | ON Semicondu... | -- | 87000 | MOSFET N-CH 20V 3.2A SOT-... |
NTR4170NT1G | ON Semicondu... | -- | 117000 | MOSFET N-CH 30V 3.2A SOT2... |
NTR4003NT3G | ON Semicondu... | -- | 60000 | MOSFET N-CH 30V 500MA SOT... |
NTR4003NT1G | ON Semicondu... | -- | 9000 | MOSFET N-CH 30V 500MA SOT... |
NTR4502PT1G | ON Semicondu... | -- | 3000 | MOSFET P-CH 30V 1.13A SOT... |
NTR4101PT1H | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 3.2A SOT2... |
NTR4503NT1G | ON Semicondu... | -- | 6000 | MOSFET N-CH 30V 1.5A SOT-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...