NTR4502PT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400mW (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	200 mOhm @ 1.95A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1.13A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The NTR4502PT1G is a single-channel high side power MOSFET. It has a large on resistance and is designed for use in power management and load switch applications. It is suitable for high side switching in load current up to 10A in multiple power devices and circuits. It has a very low gate charge, making it ideal for use in automotive, industrial and consumer systems.

Application Field

The NTR4502PT1G MOSFET is a general-purpose high side power switch used in a variety of applications, including motor control, load switching, power conditioners, and Audio amplifiers. It is suitable for both single and dual-channel amplifiers and can switch high currents up to 10A.The device is also suitable for automotive applications such as over-voltage and backlight control in displays and switches. It can also be used in non-isolating applications such as mobile phones and automotive power supplies.The NTR4502PT1G MOSFET is commonly used in low-side applications such as audio amplifiers, automotive audio, and computer systems. In audio applications, it can be used as a high-side switch for load current up to 10A. It can also be used for over-voltage protection in displays and switches.

Working Principle

Under normal operating conditions, the NTR4502PT1G MOSFET is an n-channel power MOSFET whose output is switched between two logic levels in response to the control voltage VGS. When the control voltage VGS is greater than the threshold voltage VTH, the MOSFET is turned on, and when it is less than VTH, the MOSFET is turned off.By applying a suitable voltage or current to the gate, a drain current (ID) can be forced in or out of the drain, depending on the voltage polarity. In a circuit, the control voltage VGS enables the NTR4502PT1G MOSFET to switch high currents on and off.The NTR4502PT1G also has low switching times, which make it suitable for high frequency switching applications. Furthermore, its on-resistance is low compared to other MOSFETs, which makes it suitable for power management applications.

Conclusion

The NTR4502PT1G is a single-channel high side power MOSFET. It is suitable for multiple power devices and circuits and applications such as motor control, load switching, power conditioners and audio amplifiers. The device has a low gate charge and low switching times, making it ideal for use in high frequency switching applications. It is also suitable for over-voltage protection in displays and switches.

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