NTR4502PT1 Allicdata Electronics
Allicdata Part #:

NTR4502PT1-ND

Manufacturer Part#:

NTR4502PT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 1.13A SOT-23
More Detail: P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount ...
DataSheet: NTR4502PT1 datasheetNTR4502PT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTR4502PT1 is a single FET manufactured by NXP Semiconductors in their Series Logic portfolio of energy efficient transistors. It is a 30V, 4-channel, dual n-channel, shielded FET with integrated protection against thermal runaway, overcurrent, and undervoltage. The NTR4502PT1 is commonly used in power management applications, industrial and consumer applications, lighting, and automotive for powering DC loads. The device is available in a compact TO-92-3 package.

The main application field of the NTR4502PT1 is motor control and driving applications. In such applications, it is used to provide variable speed, RPM, or power control. The device is also suitable for switching applications such as in-rush current limiters, load dump protection, and power-on reset circuits. Other applications include switching relays, power supply circuits, and automotive electronics.

The FET works on the basis of a simple bi-directional flow of electrons between the source semiconductor and the drain semiconductor. The source is an external conductor that supplies electrons. The drain is the external conductor in which the electrons flow. The flow of electrons is controlled by a gate (the third terminal). In this device, the gate is connected to an insulated gate, which is generally made of silicon oxide. The gate is charged by a voltage which increases or decreases the resistance between the source and drain. This resistance is known as the gate-source voltage.

This device offers the advantage of protection from current spikes and voltage transients. This is achieved by an integrated thermally-activated protection circuit. This circuit includes overcurrent, undervoltage, and thermal runaway monitoring. It also includes a clamp that provides shut-down protection for overcurrent and overvoltage conditions.

In addition, this device offers a wide range of load drive capability. It has a peak load current rating of 4.5A, a maximum temperature rise of 70°C, and a maximum gate-source and gate-drain voltage of ±30V. It also has a very fast turn-off time, which is rated at 1µs or less.

In summary, the NTR4502PT1 is a single FET with a wide range of application fields and working principles. It offers protection against current spikes and voltage transients, as well as a wide range of load drive capability. It is suitable for applications such as motor control and driving, switching applications, and power supplies, as well as in-rush current limiters, load dump protection, and power-on reset circuits.

The specific data is subject to PDF, and the above content is for reference

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