NTR4501NT3 Allicdata Electronics
Allicdata Part #:

NTR4501NT3-ND

Manufacturer Part#:

NTR4501NT3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 3.2A SOT-23
More Detail: N-Channel 20V 3.2A (Ta) 1.25W (Tj) Surface Mount S...
DataSheet: NTR4501NT3 datasheetNTR4501NT3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTR4501NT3 is a high-performance and low-noise N-channel enhancement-mode lateral field-effect transistor (FET), which is widely used in the fields of surface-mounted technology (SMT), power switch, and low noise electric equipment. The transistor can also be used in as a motor-driver, pre-power amplifier, switching regulator, and low-noise amplifier for audio system.

NTR4501NT3 features both large transconductance and low on-resistance, making it an optimal choice for those who need power switch and low noise equipment. Whether it is used in low voltage or high voltage device, it performs quite efficiently and reliably. The transistor packing is quite neatly and meets the international standard.

The working principle of NTR4501NT3 is quite simple. It is a three-terminal device that can be used as an electronically controlled switch, allowing or blocking the flow of current between a source, drain, and gate terminals. The gate terminal remains capacitively coupled to the drain terminal through a substrate, which improves the mobility and performance of the transistor.

When DC voltage is supplied to the gate terminal either by an external biasing or by a circuit, a depletion region is created between the gate and the source. This depletion region acts as an insulated region between the source and the drain, thus preventing any current from flowing between them. When an AC signal is supplied to the gate terminal, it modulates the depletion region, allowing or blocking the current.

In addition, NTR4501NT3 can also act as a variable resistor through its transconductance feature. It changes the resistance between the source and the drain by altering the gate signal. With a continuous reduction in the gate voltage, the resistance between the source and the drain will increase. Similarly, with an increase in the gate voltage, the resistance between the source and the drain will decrease.

Power and low noise are two of the most important features that designers keep in mind when selecting a transistor. NTR4501NT3 transistor is literally in the class of one of its own. Its high performance, low noise, and excellent long-term stability makes it a great choice for both pre-power amplifier and low noise applications. In addition, NTR4501NT3 is also a great choice for power switch applications due to its high-transconductance and low on-resistance.

NTR4501NT3 is also an environment-friendly packaging product, which makes it suitable for a variety of applications. The transistor packing is quite neatly and meets the international standard that makes it a popular choice in the industry. It is also compatible with a wide range of temperature and is suited for both low and high temperature operation.

In conclusion, NTR4501NT3 is an excellent high-performance and low-noise N-channel enhancement-mode lateral field-effect transistor that is suitable for both pre-power amplifier, switching regulator, and low noise amplifier audio applications. It is highly consistent in performance and can operate successfully in high and low temperature. The transistor also has high transconductance and low on-resistance, making it a great choice for power switch applications. It is also an environmental-friendly packaging product, meeting the international standards.

The specific data is subject to PDF, and the above content is for reference

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