NTR4501NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTR4501NT1GOSTR-ND |
Manufacturer Part#: |
NTR4501NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 3.2A SOT-23 |
More Detail: | N-Channel 20V 3.2A (Ta) 1.25W (Tj) Surface Mount S... |
DataSheet: | NTR4501NT1G Datasheet/PDF |
Quantity: | 87000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTR4501NT1G is a single MOSFET used in a variety of high-power applications. It has a wide range of uses, including switching, amplification, and logic control. Its characteristics make it suitable for use in a variety of configurations, from low-power devices up to high-power, voltage-controlled applications.The NTR4501NT1G is a n-channel enhancement-mode MOSFET with an approximate gate-source voltage rating of 40V. It has a low on-resistance capability, up to 0.2 ohms, and a low on-resistance deviation. This makes it an ideal choice for low-load applications that require accurate output control.The NTR4501NT1G has two main features – an input-side protection circuit and an active-source current-protection circuit. The input-side protection circuit prevents the MOSFET from being damaged by wrong connections or overvoltage. The active-source current-protection circuit protects the MOSFET from current overload. This combination of protection circuits provides the device with excellent long-term reliability.The NTR4501NT1G is especially well-suited for use in high-power devices, such as Class-D amplifiers or switching power supplies. It is also well-suited to use in circuits that require higher switching performance, such as solar cell drivers or battery chargers.The working principle of the NTR4501NT1G is based on the fact that its conductivity increases as its gate voltage increases. As the gate voltage rises above a certain threshold, the MOSFET will switch on and allow current to flow. This switching action is controlled by the input voltage applied to the gate of the device. The voltage range of the NTR4501NT1G is from 0 to 40V.In addition to its use as a switch, the NTR4501NT1G can also be used for amplification and signal conditioning. When used for amplification, its low on-resistance and high transconductance make it ideal for use in high-current applications. When used for signal conditioning, its high signal-to-noise ratio and low input bias currents enable low-noise operation.In conclusion, the NTR4501NT1G is a versatile and reliable device that is ideal for a range of high-power applications. It offers excellent protection against overvoltage and overcurrent, and its low on-resistance and high transconductance make it suitable for use in high-current applications. Its input and output voltage characteristics make it well-suited for use in a variety of switching, amplification, and signal conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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