NTR4503NT1

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	420mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 24V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	110 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NTR4503NT1 Application Field and Working Principle

NTR4503NT1 is an isolated N-channel depletion mode power MOSFET (metal-oxide-semiconductor field effect transistor) that is commonly used as a switch or regulator in many electronic applications. It is designed for high-temperature and high-current-density applications and is typically used in power transmission, energy conversion, communication and medical device design.The NTR4503NT1 has a high voltage rating of 650V and a continuous drain current of 49A. It is optimized for positive pulse-width modulation and has a wide range of drain-source breakdown voltages, making it suitable for a variety of high-temperature, high-current applications such as electric vehicle charging and DC-DC converters. The device has high reliability and can handle temperatures up to 175°C.The NTR4503NT1 is an enhancement-type MOSFET, meaning it requires an external voltage applied to the gate to turn on, or conduct. When a positive voltage is applied to the gate, it causes charge carriers of the same polarity to be generated in the channel, attracting the channel electrons and creating a conduction channel between the source and drain electrodes. This creates a low impedance path, allowing current to flow from the source to the drain.When the gate voltage is removed, the conduction channel is reduced and the drain-source resistance is increased, effectively shutting off the current flow. The device is designed to have very low gate-drain capacitance, making it suitable for high-frequency switching applications such as motor drives and power converters.The NTR4503NT1 is a versatile MOSFET, providing excellent power-management capabilities and high levels of system integration. Its wide range of operational voltages and drain-source breakdown voltages make it suitable for a variety of applications, including power transmission, energy conversion, communication, and medical device design. Its high-temperature operating temperature rating and low gate-drain capacitance make it an optimal choice for high-frequency switching applications such as motor drives and power converters. With its wide range of application fields, the NTR4503NT1 is a valuable component in many modern electronic systems.

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