NTR4501NT1

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.25W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	80 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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The NTR4501NT1 is a single N-Channel MOSFET (metal-oxide-semiconductor field effect transistor) designed to improve power performance in a variety of applications. MOSFETs are semiconductor devices used to amplify and switch electronic signals. The NTR4501NT1 can be used to control on and off power in the switching power supply circuit, motor drive, and high-frequency circuit applications. This MOSFET is designed to survive high current and power without significant heating. It is a discrete form of computer chip, although it also can be part of an integrated circuit. The device has a maximum drain current of 34A, as well as a low on-state resistance of 0.005 ohms. It has a drain-source voltage of 30V, and a continuous drain current of 34A. It also has a gate-source voltage of -25V and an on-state resistance of 0.005 ohms.MOSFETs are based on the principle of accumulation of electrons that lead to a formation of an electric field. As voltage is applied to a MOSFET, the electrons are "accumulated" on the gate dielectric and the junction is created. This process is known as inversion and allows the MOSFET to control the flow of electrons.The NTR4501NT1 effectively uses this principle to control power flow. The N-Channel MOSFET is built with a P-Type channel and a N-Type substrate. This creates a hole in the P-Type channel. When voltage is applied to the drain, electrons will flow through the N-Type region and fill the hole, increasing the current. When voltage is applied to the gate, the electrons will be attracted to the gate and form a junction. This junction will act as a barrier, and when the voltage is removed, the hole will be emptied out and the current will cease. This process is known as switching and it is the principle by which the NTR4501NT1 operates.The NTR4501NT1 is used in a variety of applications for switching power. These applications require a device that can handle high current, low on-state resistance, and operating voltage range. The device has excellent thermal resistance and can survive high current and power without generating significant heat. It can be used to control the flow of power in switching power supplies, motor drives, and high frequency circuits.The NTR4501NT1 is also used to balance current and voltage in power circuits. The device has a low on-state resistance which allows it to maintain the voltage and current at the same level. The device also has a low input capacitance which makes it well suited for fast-switching applications. The device is also designed to minimize surface area and reduce cost.In conclusion, the NTR4501NT1 is a single N-Channel MOSFET designed for power control applications. It is small and lightweight, yet powerful and capable of handling large amounts of current and power. The device uses the principle of inversion and switching to control current and power. It is used in switching power supplies, motor drives, and high frequency circuits. It has a low on-state resistance, a low input capacitance, and excellent thermal resistance. It is a reliable and efficient way to control power and current in a variety of applications.

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