NTR4171PT1G

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The NTR4171PT1G is a single N-Channel Horizontal Deflection P-Channel Enhancement Mode Power MOSFET transistor. This power MOSFET transistor is a four-terminal, enhancement mode transistor that utilizes P-Channel depletion mode technology and a standard planar structure. The working principle being driven by the source-drain voltage, the gate-source voltage, the drain-source current of the N-Channel Depletion mode, the rated maximum current of the source-drain and the total power dissipation by the drain-source voltage.

The NTR4171PT1G can be used in multiple fields, including electrostatic imaging, laser printers, and flat panel displays. In electrostatic imaging applications, it provides efficient power transfer and improved power handling. This power MOSFET transistor has superior temperature and performance characteristics compared to traditional devices, thus making it an ideal candidate for image processing applications. Additionally, it is highly reliable and provides improved power efficiency in laser printers, as well as being able to handle high power loads in flat panel displays.

The NTR4171PT1G, although built on standard planar structure, is designed using established p-channel enhancement mode power MOSFET technology. It operates by using the source-drain voltage to create an electric field between the source and the drain, allowing an electric current to flow in the output stage. The current, being a function of the source-drain voltage, is then controlled by the gate-source voltage, which also controls the amount of power being allowed to traverse through the device.

In terms of reliability, the NTR4171PT1G exhibits excellent performance characteristics, allowing it to deliver stable performance even under harsh conditions. Its rated maximum current is greater than traditional p-channel MOSFETs, allowing it to nicely handle high voltage and power while still maintaining the benefits associated with p-channel enhancement mode power MOSFETs. This power MOSFET transistor is also characterized by low resistance values, resulting in a reduced overall power loss across the device.

Another benefit of the NTR4171PT1G is its superior thermal characteristics. The transistor exhibits excellent thermal stability, allowing it to remain cool even under extreme temperature and power demands. Its rated maximum drain-source voltage also allows it to safely handle large amounts of power, making it suitable for many types of applications.

The overall reliability benefits, thermal characteristics and low power loss allow the NTR4171PT1G to deliver efficient power transfer in numerous applications and systems. Given its reliable performance and its ability to handle high power loads, it is an ideal choice for electrostatic imaging, laser printers and flat panel displays.

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